EliteSiC solutions for EV Charging

SiC & SiC/Si Hybrid Modules for EV Charging

onsemi offers the most comprehensive portfolio of PIMs to address the key topologies on the market. This gives designers the flexibility to pick the right PIM for power conversion stages in their DC fast charging or energy storage system applications. To accelerate the design cycle, advanced piecewise linear electrical circuit simulation (PLECS) models through our Self-Service PLECS model Generator and application simulation with the Elite Power Simulator of this portfolio will also be made available to designers.

For each module, onsemi uses die from the same wafer to ensure more consistency and reliability so designers don’t have to use discretes from different suppliers, which can lead to varying performance results. In addition to its reliability, this module portfolio offers the following benefits:

• Uses the Gen3 M3S SiC MOSFET technology which offers the lowest switching losses and highest efficiency in the industry
• Supports key topologies such as multi-level T-type neutral point clamp (TNPC), half-bridge and full-bridge topologies
• Supports scalable output power from 25 kW to 100 kW, enabling multiple DC fast charging and energy storage systems platforms including bidirectional charging
• Industry-standard F1 and F2 packages with the option of pre-applied Thermal Interface Material (TIM) and press fit pins
• Enables optimal thermal management, avoiding system failure due to overheating
• Full SiC modules offer energy conservation by minimizing power losses, directly translating to cost and energy savings
• Offers more robustness and dependability, ensuring consistent operations

EliteSiC Modules

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Pairing Gate Driver to EliteSiC

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

While IGBTs offer superior thermal performance vs. silicon solutions in these high-power applications, EliteSiC by onsemi enables both higher switching speeds and high power. onsemi offers a complete portfolio of SiC MOSFETs ranging from 650V to 1700V breakdown voltage, with RDSONs as low as 12mΩ. But, every SiC MOSFET requires the correct Gate Driver to maximize system efficiencies and minimize the total power losses. This easy-to-use table below pairs the correct Gate Driver to each SiC MOSFET.

onsemi's IGBTs are essential components in EV charging technology, known for their efficiency and reliability in high-power charging stations worldwide. Designed with advanced semiconductor technology, they ensure optimal performance, thermal management, and power density, ideal for public and private charging facilities. As the automotive industry embraces electrification, onsemi continues to lead with innovative solutions that drive the evolution of EV charging infrastructure.