As a truly global megatrend, all EV chargers need to use electrical energy in the most effective way. For every type of charge point, at every voltage, the need for highly efficient energy conversion is universal. That’s what silicon carbide brings to EV charging.
Technology developed by onsemi is defining the global EV charging infrastructure. This includes its EliteSiC MOSFET modules, delivering power levels of 350 kW to charge EVs faster and more economically. EliteSiC-based power modules from onsemi have been endorsed by leaders in the automotive industry. These modules are in production electric vehicles now, delivering longer ranges, higher efficiency, and faster acceleration.
Advanced discrete and modular solutions enable traction inverters to generate higher levels of torque. Efficiency here extends the range of the vehicle and the lifetime of the electrical drive train.
Integrated single side direct cooling (SSDC) power modules from onsemi, compatible with onsemi’s IGBT modules, use its second generation EliteSiC MOSFETs to deliver higher performance and better efficiency, all with onsemi’s industry-leading quality.
- SiC Parts
- Kits
- Technologies
onsemi’s EliteSiC Silicon Carbide Portfolio consists of MOSFETs, Diodes, as well as Full SiC and Si/SiC Hybrid Modules. onsemi has an integrated manufacturing chain from the sand to product to system solutions, with its own SiC boule, singulation, substrate & wafer production. onsemi puts a lot of effort to ensure SiC device’s reliability and robustness, and a lot of action has been taken to improve defect scanning, in-process control and burn-in, and more.
Advantages
- Proven Quality / Robust Planar Design
- In-process Control and Burn-in
- Defect Scanning during Manufacturing
- 100% Avalanche testing of All Dies
- No Drift in Threshold or Parameters
- High Reliability Gate Oxide
- Automotive Qualification AECQ-100
- Best in class design tools
- Physical & Scalable accurate Simulation Models
- Application notes and Design guides
- New online System design tool
- Fully Integrated Manufacturing - From Powder to Products
- New 3rd generation SiC offering
- Optimized for High temperature operation
- Improved parasitic capacitances for High Frequency High Efficiency application
- Large die with low RDS(on) available
- Automotive or Industrial grade for All Values and Packages
- Wide offering in Standard and Custom Power Integrated Modules (PIM)
- Large portfolio of Voltages and RSD(on) available in 3- and 4-Leads packages
EliteSiC MOSFETs
The EliteSiC MOSFET portfolio from onsemi is designed to be fast and rugged. Silicon Carbide (SiC) MOSFETs have a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy bad gap, and 3x higher thermal conductivity.
EliteSiC Diodes
The EliteSiC Diodes portfolio from onsemi includes AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive and industry applications. Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.
Evaluation/Development kits
- SECO-HVDCDC1362-15W-GEVB: 15 W SiC High-Voltage Auxiliary Power Supply for HEV & BEV Applications
- SECO-GDBB-GEVB: Gate drivers plug-and-play ecosystem
- SECO-HVDCDC1362-40W-GEVB: 40 W SiC high-voltage auxiliary power supply for HEV & BEV applications
- SECO-LVDCDC3064-IGBT-GEVB: 6 - 18 Vdc Input Isolated IGBT Gate Driver Supply +15 V / -7.5 V / 7.5 V with Automotive Qualified NCV3064 Controller
- SECO-LVDCDC3064-SIC-GEVB: 6-18 Vdc Input Isolated SiC Gate Driver Supply +20V/-5V/5V with Automotive Qualified NCV3064 Controller Evaluation Board
Related Technologies
Isolated gate drivers
The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications. onsemi Gate Drivers provide features and benefits that include High system efficiency high reliability.
- NCD57xxx Isolated High Current and high efficiency IGBT gate driver
- NCV57xxx Automotive IGBT gate Driver, Isolated high current and high efficiency with internal galvanic isolation
- NCP51705 SiC MOSFET driver, low-side, single 6 A high-speed
- NCV51705 0 Automotive SiC MOSFET driver, low-side, single 6 A high-speed
Resources
Interview: Jon Harper
Watch our interview with onsemi SME, Jon Harper, while he talks about how SiC can be used, where SiC is best used and what SiC may bring to your application.
Webinar series
Learn about key challenges, trade-offs and compromises needed in building DC fast charging (DCFC) systems as well as how to design, build and validate DCFC systems using the onsemi SiC 25 kW module-based DCFC system ref design.
Video: Is this the right time to move to SiC?
Silicon Carbide is changing the way we control and convert power.
Video: Why does the world need SiC?
No matter how energy is generated or consumed, there's a universal need to change and control it.
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