High efficiency power conversion & control
Toshiba America Electronic Components draws on many decades of experience serving the power sector - providing engineers with highly-integrated solutions that keep pushing the performance envelope. Through continued innovation, in semiconductor topologies and packaging technologies, they play a pivotal role in making power system designs more efficient, reliable and compact. Toshiba MCUs are redefining motor control, their optical isolators protecting circuitry and people and their MOSFETs allowing support of faster power supply switching speeds. Their passion for power solutions covers exciting new products and unveils a new power tool motor control reference design.
- MOSFETs
- Driver ICs
- Drain Common MOSFETs
3rd Generation SiC MOSFETs
Toshiba's 3rd generation Silicon Carbide (SiC) MOSFETs introduces a selection of both 650V and 1200V voltage products. In common with 2nd generations, Toshiba's newest generation of MOSFETs include a built-in SiC Schottky Barrier Diode (SBD) with a low forward voltage (VF) of -1.35V (typ.), placed in parallel with the PN diode in the SiC MOSFETs, to suppress fluctuation in RDS(on) thereby enhancing reliability.
Features
- Low on-resistance per unit area (RDS(ON)A)
- Low drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd)
- Low diode forward voltage: VDSF = -1.35 V (typ.) @VGS = -5 V
Applications
- Switching power supplies (servers, data center, communications equipment, etc.)
- EV charging stations
- Photovoltaic inverters
- Uninterruptible power supplies (UPS)
650V SiC MOSFETs
Products: TW015N65C,S1F | TW027N65C,S1F | TW048N65C,S1F | TW083N65C,S1F | TW107N65C,S1F
1200V SiC MOSFETs
Products: TW015N120C,S1F | TW030N120C,S1F | TW045N120C,S1F | TW060N120C,S1F | TW140N120C,S1F
L-TOGL Automotive MOSFETs
40V N-channel power MOSFETs for automotive applications supporting high current. New Package L-TOGLTM and U-MOS IX-H Chip Process Contribute to Higher Current Density in Equipment.
Toshiba's 40V breakdown voltage N-channel power MOSFETs XPQR3004PB and XPQ1R004PB achieve ultra-low resistance, high drain current rating and high heat dissipation characteristics by combining a new high heat dissipation package L-TOGL™ (Large Transistor Outline Gull-wing Leads) and U-MOS IX-H chip process.
Features
- AEC-Q101 qualified
- Low drain-source on-resistance:
- XPQR3004PB: RDS(ON) = 0.23 mΩ (typ.) (VGS = 10 V)
- XPQ1R004PB: RDS(ON) = 0.80 mΩ (typ.) (VGS = 10 V)
- Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
- Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA)
Applications
- Automotive
- Switching Voltage Regulators
- Motor Drivers
- DC-DC Converters
Products: XPQR3004PB,LXHQ
TCK42 series Driver ICs
The TCK42 Series driver ICs are designed to be paired with single or dual N-channel MOSFETs and come equipped with a built-in charge pump and a variety of protection functions (OVLO, UVLO, Gate-Source protection). When paired with a Common Drain MOSFET, it can be configured in a way that enables power multiplexing of two voltage lines from 5V to 24V. The TCK42 series is ideal for load switching in devices that require higher power density. Some applications include USB-PD, mobile, IoT, wearables, and others devices.
Features
- Ultra-small package: 1.2x0.8mm(typ.), t:0.35mm(max)
- Wide input voltage: VIN max 40 V, VIN_opr=2.7 to 28 V
- Gate-source voltage (5.6V, 10V)setting depending on input voltage with a built-in charge pump circuit: VGATE
- Over Voltage Lock Out(OVLO) Lineup: VIN_OVLO = 6.31/10.83/14.29/23.26/27.73V
- Low standby current: I Q(OFF): 0.9uA max@12V stand-by
Products: TCK420G,L3F | TCK421G,L3F | TCK422G,L3F | TCK423G,L3F | TCK424G,L3F | TCK425G,L3F
Drain-common MOSFETs for Battery Protection
Toshiba's newly released 12V common-drain N-channel MOSFETs are designed for battery protection circuits on Lithium-ion (Li-ion) battery packs in mobile devices and other battery powered equipment. Li-ion battery packs use highly robust protection-circuits to maximize battery life and ensure safety. Toshiba offers SSM6N951L and SSM10N954L in a low profile package with ultra-low on-resistance to help improve power density. Common-drain MOSFETs with low on-resistance help reduce heat generation during charging/discharging, and are great for systems that require protection circuits with low power loss and high-density mounting.
Features
- Low on-resistance
- SSM6N951L
- RSS(ON) = 4.4 mΩ (typ.) (@VGS = 4.5V)
- SSM10N954L
- RSS(ON) = 2.2 mΩ (typ.) (@VGS = 3.8 V)
- RSS(ON) = 2.1 mΩ (typ.) (@VGS = 4.5 V)
- SSM6N951L
- Low Gate-Source leakage current: IGSS=+1uA (max) @VGS=+8V
- RoHS Compatible
- Halogen-free
Applications
- Battery protection circuits
- Office and personal devices i.e. smartphones, tablets, power banks and wearable devices.
- Consumer electronic devices such as game consoles, electric toothbrushes, digital cameras
Products: SSM6N951L,EFF | SSM10N954L,EFF
Resources
Catalog
Selection Guides
Application Notes:
Whitepaper: Superjunction MOSFETs and SiC diodes
Energy efficiency has been a driving factor in most new designs. Toshiba’s Superjunction MOSFETs and wide-bandgap SiC diodes lead the way with for switching power conversion systems and switching power supplies.