Efficient and effective high-power FETs
Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of our normally-off GaN FET products ensure standard, low-cost gate drivers can be used in your design.
Advantages of GaN
- Linear Eoss
- Low Qoss -> better efficiency & higher frequency:
- Lower current required
- Lower flux swing means lower magnetic loss
- Faster transition means lower RMS current
- Low Qrr -> possibility of efficient hard-switching relieves constraints
- PSFB in light-load
- LLC in start-up and load step
- Low gate-drive current required
- Simplified power supply for the gate drive
From product concept and design to manufacturing and sales, getting the smallest details right helps the world’s most demanding industries make quality and efficiency gains. Nexperia’s simple drive circuitry (cascode architecture) provides additional gate robustness and normal gate drive. It’s more efficient, easier to drive and requires no negative voltage to turn off the FET.
Products
GAN063-650WSA
The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies – offering superior reliability and performance.
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GAN041-650WSB
The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies – offering superior reliability and performance.
To request a sample, click "Request Sample" above in GAN063-650WSA listing.
CCPAK GaN FETs
As the innovators of copper-clip package technology, Nexperia brings almost 20 years experience of producing high-quality, high-robustness SMD packaging to it’s GaN FET portfolio. Adopting proven technology, CCPAK gives industry-leading performance in a truly innovative package. Wire-bond free for optimized thermal and electrical performance, and simplified design of cascode configuration to eliminate the need for complicated drivers and controls.
GAN039-650NBBA 33mΩ, 650V CCPAK1212
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GAN039-650NTBA 33mΩ, 650V CCPAK1212i
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Video highlights
Power GaN FETs Brochure
Key to Nexperia’s success has been a strong commitment to meet and even go beyond the stringent quality standards our customers demand, and this standard level also applies to our development of power GaN FETs.
Engineering Services
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