The Latest Super Junction Technology
Toshiba DTMOSVI series designed for the highest switching efficiency.
DTMOSVI 650V Series Super Junction MOSFETs
Toshiba’s new 650V-rated N-channel power MOSFETs strengthen their latest DTMOSVI series with highly appealing performance parameters.
These devices offer designers a 40% reduction in terms of their drain-source on-resistance x gate-drain charge (QGD) figure of merit (FoM) when compared to the previous DTMOS generation.
Toshiba’s DTMOSVI 650V super junction power MOSFET series also features several parts that are housed in a TOLL (TO-leadless) package.
TOLL is a surface-mount package that has an approximately 27% smaller footprint than the usual D2PAK package. It is also a 4-pin type package that allows Kelvin connection of its signal source terminal for the gate drive.
This can reduce the influence by the inductance of the source wire in the package to bring out the high-speed switching performance of the MOSFETs, suppressing oscillation when switching. TOLL parts include: TK065U65Z, TK090U65Z, TK110U65Z, TK155U65Z and TK190U65Z.
DTMOSVI: Highest Efficiency Switching
The DTMOSVI series has a super junction structure capable of reducing the resistance of the drift layer even though it has a high withstand voltage. From the fourth-generation DTMOSIV series onward, Toshiba has adopted a single-epi process to achieve both low on-resistance and high-speed switching. The DTMOSVI series, the latest generation, is able to contribute to more efficient switching power supplies by reducing the product of the drain-source on-resistance and the gate-drain charge (RDS(ON) × Qgd), which is a figure of merit, compared with our conventional DTMOSIV-H series.
Comparisons of figures of merit
| Features | Advantages | Benefits |
|---|---|---|
| 30% reduction in RDS(ON)*A compared to previous generation | Reduction of chip size at same performance or improved performance at same chip size | Reduced heat system costs |
| Reduction in COSS | DTMOSVI offers 12% reduced switching loss, EOSS, compared to the predecessor | Less costs of field failure |
| Application of latest process technology: single epitaxial process | Lower increase in on-resistance at temperature rise | Less passive component costs |
| Wide range of on-resistances and packaging options | Freedom of choice and flexibility on package and on RDS(ON) lineup | Easy design-in for faster time to market and product launch |
| Lowest FOM (RDS(ON) x Qgd) offered by DTMOSVI | DTMOSVI for highest efficiency switching at power supply | Allow higher power density |
Applications: Switching power supplies in industrial equipment, data centers and power conditioners of photovoltaic generators
High Voltage MOSFET Flyer
Toshiba has developed generations of super-junction 500V, 600V, 650V, and 800V DTMOS MOSFET series for applications such as switching power supplier, power factor control and industrial applications.
MOSFET Selection Guide 2021
Explore this selection guide to view the breadth of Toshiba small signal and power MOSFETs with their part naming conventions and device packages.