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Adoption of wide bandgap technology has reached the tipping point, and its usefulness is now undeniable. Whether you’re exploring silicon carbide (SiC) or gallium nitride (GaN) power solutions, dive into the latest information from Avnet on these evolving technologies.
Understanding trade-offs for DC-DC converters in EV charging
By
Avnet Staff
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2024年6月24日
Within EV fast charging technologies, focus is on the crucial role of DC-DC converters in enabling efficient energy transfer. The design will be influenced by the primary commercial objective.
Designing Vienna Rectifiers for EV Chargers
By
Avnet Staff
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2024年6月24日
As the EV charging infrastructure grows, EVSE providers need to offer a choice. Cost, efficiency and reliability are trade-offs that begin at the component level and move quickly to the converter topology.
When GaN is too fast for your application, consider SiC instead
By
Avnet Staff
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2023年4月24日
The best power converters are not always the ones that switch the fastest. Gallium Nitride (GaN) switches faster than other power transistors, but sometimes it is too fast. Silicon Carbide (SiC) MOSFETs may sometimes be a better option.
Combining GaN and SiC for cost-effective power conversion
By
Avnet Staff
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2023年4月20日
The public image of silicon carbide (SiC) and gallium nitride (GaN) is as wonder materials. We know they are displacing older silicon technology, boosting the efficiency of power conversion stages. However, neither is a universal solution.
Understand practical GaN and SiC differences for EV onboard chargers
By
Avnet Staff
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2023年4月18日
Depending on the design, wide bandgap devices may provide efficiency gains in power conversion for onboard chargers. But which do you choose over silicon if any? We look at the options and offer some advice.
The undeniable advantages of SiC technology over Si
By
Milan Ivkovic
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2022年12月5日
SiC will soon overtake Si as the dominant semiconductor material for power devices with voltage rating higher than 600V. Designers looking to stay competitive and lower long-term system costs are turning to SiC-based technologies good reason.
How wide bandgap semiconductors are improving renewable energy design
2022年7月13日
While silicon served us admirably for half a century, engineers are turning to wide bandgap technologies such as silicon carbide and gallium nitride to increase converter/inverter efficiency as momentum to harness renewable energy increases.
A closer look at SiC quality
2022年6月27日
Silicon carbide builds on established manufacturing methodologies but requires entirely new manufacturing processes. Increasing yield and reducing costs relies on imposing the highest quality at every stage.
Why you should care about SiC figures of merit
2022年6月10日
SiC semiconductors are becoming ubiquitous in power conversion equipment, particularly in the areas of EVs, solar and energy storage systems. This article reviews applications and explores the figures of merit that can be used to compare devices.
How robust testing forms part of the SiC supply chain
2022年6月10日
In high reliability/availability applications, SiC semiconductors are seen as emerging technology. This article explains their benefits and how an end-to-end supply chain with robust testing makes SiC a safe design option.
Considerations when designing with wide bandgap devices
SiC and GaN wide bandgap semiconductor switches can provide a step improvement in efficiency in power converters. Engineers should be aware that they have different secondary characteristics compared with Si-MOSFETS and IGBTs.
Selecting wide bandgap devices for motor control applications
By
Milan Ivkovic
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2021年12月20日
When it comes to smart control applications, it’s worth taking a step back to consider when and if the switch to wide bandgap from MOSFET or IGBT makes sense. When the answer is yes, then the decision is whether SiC or GaN is the way to go.
Advances in wide-bandgap semiconductors for vehicles
By
Jason Struble
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2021年8月24日
See the technical and cost comparisons between older silicon IGBT and MOSFET technologies and newer generation silicon carbide switches.
EV charging: The drive for faster charging speeds and higher efficiency
2021年8月11日
Fast DC chargers and wide-bandgap silicon carbide switches are key to improved EV charging.
Three design freedoms enabled by SiC technology
By
Milan Ivkovic
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2021年4月17日
Even with the undeniable performance and potential of silicon carbide (SiC) technology, some designers may be hesitant initially to tackle new projects using SiC.