Silicon Carbide MOSFET
for Electric vertical take-off and landing (eVTOL)
Open a new door for power supply with Toshiba’s SiC MOSFETs support downsizing and low-loss power supplies
Solving environmental and energy problems is an important global issue. While the demand for electric power continues to escalate, the call for energy conservation and the need for highly efficient and compact electric power conversion systems increases rapidly.
Power MOSFET using new SiC materials offer high voltage resistance, high-speed switching, and low on-resistance properties compared to conventional silicon (Si) MOSFET and IGBT products. This will greatly reduce power dissipation and supports a reduction in the size of equipment.
Features
Features of 2nd Generation SiC MOSFETs
Since the dielectric breakdown strength of SiC (silicon carbide) is about 10 times as high as that of Si (silicon), SiC power devices can offer a high withstand voltages and low voltage drops. The on-resistance per unit area can be reduced in SiC devices compared with that of Si for the same withstand voltage.
Click here for details: https://toshiba.semicon-storage.com/ap-en/semiconductor/product/mosfets/sic-mosfets/articles/features-of-sic-mosfets.html
Application
Power Supply Unit for Electric Vehicles/Transportation Charging Stations
Benefits
What are the merits of using SiC MOSFETs?
Introducing application examples that have improved efficiency by using SiC MOSFETs.
Click here for details: https://toshiba.semicon-storage.com/ap-en/semiconductor/product/mosfets/sic-mosfets/articles/loss-comparison-between-sic-mosfet-and-si-igbt.html
