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Adoption of wide bandgap technology has reached the tipping point, and its usefulness is now undeniable. Whether you’re exploring silicon carbide (SiC) or gallium nitride (GaN) power solutions, dive into the latest information from Avnet on these evolving technologies.
The best power converters are not always the ones that switch the fastest. Gallium Nitride (GaN) switches faster than other power transistors, but sometimes it is too fast. Silicon Carbide (SiC) MOSFETs may sometimes be a better option.
While silicon served us admirably for half a century, engineers are turning to wide bandgap technologies such as silicon carbide and gallium nitride to increase converter/inverter efficiency as momentum to harness renewable energy increases.
Silicon carbide builds on established manufacturing methodologies but requires entirely new manufacturing processes. Increasing yield and reducing costs relies on imposing the highest quality at every stage.
SiC semiconductors are becoming ubiquitous in power conversion equipment, particularly in the areas of EVs, solar and energy storage systems. This article reviews applications and explores the figures of merit that can be used to compare devices.
In high reliability/availability applications, SiC semiconductors are seen as emerging technology. This article explains their benefits and how an end-to-end supply chain with robust testing makes SiC a safe design option.
SiC and GaN wide bandgap semiconductor switches can provide a step improvement in efficiency in power converters. Engineers should be aware that they have different secondary characteristics compared with Si-MOSFETS and IGBTs.
When it comes to smart control applications, it’s worth taking a step back to consider when and if the switch to wide bandgap from MOSFET or IGBT makes sense. When the answer is yes, then the decision is whether SiC or GaN is the way to go.
Even with the undeniable performance and potential of silicon carbide (SiC) technology, some designers may be hesitant initially to tackle new projects using SiC.