Toshiba Electronics Europe TPH2R408QM / TPN19008QM

U-MOS X-H 80V series N-channel power MOSFETs

TPH2R408QM and TPN19008QM are based upon Toshiba's latest generation U-MOSX-H process that exhibits a reduction of around 40% in drain-source ON-resistance (R_DS(ON)) compared to corresponding 80 V products in earlier processes. These devices can significantly enhance power supply efficiency.

 

Key features

• Lowest Rds(ON) in compact form factor
• Excellent FOM: R_ds(ON) x Q_(oss) and R_ds(ON) x Q_(sw)
• TPH2R408QM in 5 x 6 mm SOP Advance for improved compatibility, and TPN19008QM in 3 x 3 mm
• Junction temperature (Tj): 175 °C max.

 

Additional features

• Low conduction loss
• High-efficiency switching
• More thermal headroom  

Additional Benefits

• Lower heat generation
• Smaller space consumption, helping to reduce costs

 

Applications

• Telecom Power Supply (PSU)
• PSU synchronous rectification 24 to 28 V output voltage
• Motor drive power stage for 36 V power tool
• Industrial power supply

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