onsemi FGH4L50T65MQDC50
IGBTs - FGH4L50T65MQDC50 - 650V field stop 4th generation mid speed IGBT with co-pack SiC diode
Using the novel field stop 4th generation IGBT and 1.5 generation SiC Schottky Diode technology in TO-247 4-lead package, FGH4L75T65MQDC50 offers the optimum performance with low conduction and switching losses for high-efficiency operations for industrial applications.
Key features
- Positive temperature co-efficient
- Low Vce(sat)
- Low Eon and Eoff
- Smooth and optimized switching
Additional features
- High current capability
- 100% of the parts are tested for ILM (Note 2)
- Low saturation voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 50 A
- No reverse recovery / No forward recovery
- Tight parameter distribution
- RoHS Compliant
Applications
- Solar inverter
- UPS
- Energy storage system
- PFC
- EV Charging station
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