onsemi IGBTs | FGY75T120SWD
1200V, 75A field stop VII discrete IGBT in power
Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3-lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high-efficiency operations in various applications like Solar, UPS and ESS.
Key features
- Maximum junction temperature − TJ = 175°C
- Low switching loss
- High current capability
- Positive temperature coefficient for easy parallel operation
Additional features
- Smooth and optimized switching
- RoHS compliant
Applications
- Boost and inverter in Solar system
- UPS
- Energy storage system
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