Nexperia is all you need – Discover the latest trends and products

2nd generation (H2) power GaN FETs

Efficient and effective high-power FETs

Extending Nexperia’s GaN footprint with the new GAN041-650WSA, offering performance improvements as well as 80+ titanium grade efficiency, satisfying new EU server power requirements.

Resources:

Key features:

• Ultra-low reverse recovery charge
• Simple gate drive (0 V to +10 V or 12 V)
• Robust gate oxide (±20 V capability)
• High gate threshold voltage (+4 V) for very good gate bounce immunity
• Very low source-drain voltage in reverse conduction mode
• Transient over-voltage capability

ASFETs for Hotswap and Soft Start with Enhanced SOA

Reliable linear mode, enhanced SOA and low R_DS(on)

Whether it is in the cloud or at the edge, we truly live in a 24/7 world. So much of our daily lives depend on rack-based computers, communications and storage systems that are always-on. Ensuring these systems do not experience any power disruption and to protect the components on replacement boards when they are inserted into a live system, it is essential that in-rush current is carefully controlled.  In normal MOSFETs, strong SOA and low R_DS(on) are mutually exclusive. Offering both capabilities in a single device, Nexperia’s specific MOSFETs for Hotswap and Soft Start are optimized for a non-stop world. 

Resources:

• Family page: Nexperia Application Specific MOSFETs: Optimized to your needs
• App note: Maximum continuous currents in NEXPERIA LFPAK power MOSFETs
• ​Press release: Nexperia extends market-leading low R_DS(on) MOSFET performance with the release of its 0.57 mΩ product in LFPAK56
• Press release: Nexperia announces lowest R_DS(on) MOSFETs in LFPAK56 and LFPAK33 without compromising other vital parameters
• Press release: Nexperia MOSFETs deliver Best-In-Class Safe Operating Area and improved R_DS(on) for Hot Swap designs
• Press release: Nexperia’s new Application-Specific MOSFETs (ASFETs) for hot-swap increase SOA by 166% and slash PCB footprint by 80%
• Blog: Shrinking hotswap footprint with enhanced SOA

Key features:

• MOSFETs with a strong linear mode performance and enhanced Safe Operating Area (SOA) are required to manage in-rush current effectively and reliably when capacitive loads are introduced to the backplane
• The new device enhances SOA by 166% when compared to 50 V in D2PAK package
• Once a replacement board is safely powered up, the MOSFET is turned fully ON. In this mode of operation, a low R_DS(on) value is of primary importance, helping to keep temperatures down and system efficiency at a maximum

Applications:

• Hotswap for communication infrastructure
• High performance rack-/blade based server
• Hotswap for blade server

NextPower 80 V / 100 V

Smaller, faster, cooler

NextPower 80/100 V MOSFETs are Nexperia’s latest generation parts recommended for high efficiency switching and high reliability applications.  With 50% lower R_DS(on) and strong avalanche energy rating. Ideally suited for power supply, telecom and industrial designs, especially suiting USB-PD Type-C chargers and adaptors and 48 V DC-DC adaptors. The devices feature low body diode losses with Q_rr down to 50 nano-coulombs (nC) - resulting in lower reverse recovery current (I_rr), lower voltage spikes (Vpeak) and reduced ringing which allows for further optimised dead-time.

Resources:

• Family page: Nexperia NextPower 80/100V Portfolio: Smaller, faster, cooler
• ​App note: Understanding power MOSFET data sheet parameters
• App note: Using RC thermal models
• App note: LFPAK MOSFET thermal design guide
• Press release: NextPower 100V power MOSFETs from Nexperia feature low Q_rr, and high 175°C rating
• Press release: First products from Nexperia’s new Manchester 8-inch wafer line are industry-leading Qrr Figure of Merit 80 V / 100 V MOSFETs
• Press release: Nexperia’s new Application-Specific MOSFETs (ASFETs) for hot-swap increase SOA by 166% and slash PCB footprint by 80%
• Blog: Is today’s accepted MOSFET Figure of Merit still relevant?
• Blog: Q_rr: overlooked and underappreciated in efficiency battle
• Blog: Enhanced body diode behavior improves Q_rr and V_sd
• Blog: Shrinking hotswap footprint with enhanced SOA

Key features:

• NextPower 100 V uses deep-trenches and charge-balanced structure (resurf)
• High efficiency and low spiking in switching applications
• Qualified to 175˚C
• LFPAK56 low stress lead-frame and wave-solder compatible
• Low R_DS(on)
• Improved Qg(tot) figure-of-merit (FOM)
• Best-in-class low Q_rr gives high efficiency in switching applications
• Avalanche rated, 100% avalanche tested
• Optimised for switching, low spiking and high efficiency

Applications:

• Synchronous rectifier in flyback and resonant topology
• AC/DC and DC/DC converters
• LED lighting
• Full-bridge and half-bridge topologies
• Motor control
• UPS and Solar inverter