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EBV - Infineon - CoolSiC Gen 2 (HB)

Infineon CoolSiC™ MOSFETs Generation 2

EBV - Infineon - CoolSiC Gen 2 Intro Static HTML

CoolSiC™ MOSFETs Generation 2

Empowering the next generation of high-performance systems

Explore how the new CoolSiC™ trench MOSFET G2 enables a new level of SiC performance, while meeting the highest quality standards in all common combinations of power schemes: AC-DC, DC-DC and DC-AC. Photovoltaic inverters, energy storage systems, EV charging, power supplies, motor drives and more belong to the many cases where SiC MOSFETs provide additional performance, compared to Si alternatives.

Features

650 V / 1200 V CoolSiC™ MOSFET G2
Lowest available R_DS(on)
Largest product portfolio
Unique robustness features

Potential applications

EV charging
Solar
UPS
Drives
Datacenter and telecom power, industrial SMPS
Renewables
Consumer applications (White Goods, TV, Air conditioning, Heat pumps)

Striving for excellence in SiC MOSFETs by trench technology

CoolSiC™ Generation 1	CoolSiC™ Generation 2
Established the benchmark in efficient power conversion	Securing price-performance leap
Solved the gate oxide reliability risk in SiC MOSFETs using a trench gate	Maintaining G1 high reliability
Overcame common SiC MOSFET limitations in control and drive	Adding new robustness features for maximizing each $ invested in SiC-based power systems
Made all industry-standard packages available	Advancing the packaging technology for more powerful products
>>> Reliable performance <<<	>>> Unmatched industry leadership <<<

Further advancement of Infineon´s unique .XT interconnection technology (e.g. in discrete housings TO-263-7, TO-247-4) serves to overcome the common challenge of improving semiconductor chip performance while maintaining its thermal capability. The thermal capability is now 12% better for the new generation, boosting the chip figures-of-merit to a new level of SiC performance.

Featured products

CoolSiC™ MOSFETs 650 V G2
R_DS(on) max [mΩ] 18 V	R_DS(on) typ [mΩ] 18 V	TO-247-3	TO-247-4	D2PAK-7
62	50	IMW65R050M2H	IMZA65R050M2H	IMBG65R050M2H
49	40	IMW65R040M2H	IMZA65R040M2H	IMBG65R040M2H
24	20	IMW65R020M2H	IMZA65R020M2H	IMBG65R020M2H
18/21	14.5 / 16	IMW65R015M2H	IMZA65R015M2H	IMBG65R015M2H
8.5	6.7 / 7			IMBG65R007M2H

CoolSiC™ MOSFET 1200 V G2
G2 R_DS(on) [mΩ]	D2PAK-7 (TO-263-7) Generation 2
8	IMBG120R008M2H
12	IMBG120R012M2H
17	IMBG120R017M2H
22	IMBG120R022M2H
26	IMBG120R026M2H
34	IMBG120R034M2H (available soon)
40	IMBG120R040M2H
53	IMBG120R053M2H
78	IMBG120R078M2H
116	IMBG120R116M2H
181	IMBG120R181M2H
234	IMBG120R234M2H

Videos

EBV - Infineon - CoolSiC Gen 2 - Intro Video (MM)

CoolSiC™ discrete MOSFET Generation 2

Power conversion solutions that guarantee high energy efficiency are key to reaching decarbonization goals and achieving unlimited green energy. SiC based power electronics boost energy efficiency compared to Si alternatives in many cases. To speed up the implementation of clean energy and energy efficiency in a global world Infineon is releasing the second generation of CoolSiC™ MOSFETs.

EBV - Infineon - CoolSiC Gen 2 - Introducing Video 2 (MM)

Introducing Infineon CoolSiC™ MOSFET discrete 650 V G2

Be familiar with Infineon's CoolSiC™ MOSFET discrete 650 V generation 2, know its key features, target application and benefits and understand its positioning compared to other technologies.

Infineon Logo

EBV - Infineon CoolSiC Highlights Grid Box Light (GBL)

Infineon CoolSiC™ MOSFETs and Diodes

Infineon's portfolio includes CoolSiC™ Schottky diodes, CoolSiC™ hybrid models, CoolSiC™ MOSFET modules and discretes, plus EiceDRIVER™ gate driver ICs for driving SiC devices.

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Resources

Documents:

Simulation model:

CoolSiC MOSFET G2 650 V

EBV - Infineon - CoolSiC Gen 2 - Blue Line Static HTML

EBV - Infineon - CoolSiC Gen 2 - CoolSiC 1 (MM)

Infineon CoolSiC™ MOSFETs and Diodes

Infineon's portfolio includes CoolSiC™ Schottky diodes, CoolSiC™ hybrid models, CoolSiC™ MOSFET modules and discretes, plus EiceDRIVER™ gate driver ICs for driving SiC devices.

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