CoolSiC™ MOSFETs Generation 2
Empowering the next generation of high-performance systems
Explore how the new CoolSiC™ trench MOSFET G2 enables a new level of SiC performance, while meeting the highest quality standards in all common combinations of power schemes: AC-DC, DC-DC and DC-AC. Photovoltaic inverters, energy storage systems, EV charging, power supplies, motor drives and more belong to the many cases where SiC MOSFETs provide additional performance, compared to Si alternatives.
Features
- 400 V, 650 V / 1200 V CoolSiC™ MOSFET G2
- Lowest available RDS(on)
- Largest product portfolio
- Unique robustness features
Potential applications
- EV charging
- Solar
- UPS
- Drives
- Class-D audio
- Datacenter and telecom power, AI server PSU, industrial SMPS
- Renewables
- Solid-state circuit breaker
- Consumer applications (White Goods, TV, Air conditioning, Heat pumps)
Striving for excellence in SiC MOSFETs by trench technology
| CoolSiC™ Generation 1 | CoolSiC™ Generation 2 |
| Established the benchmark in efficient power conversion | Securing price-performance leap |
| Solved the gate oxide reliability risk in SiC MOSFETs using a trench gate | Maintaining G1 high reliability |
| Overcame common SiC MOSFET limitations in control and drive | Adding new robustness features for maximizing each $ invested in SiC-based power systems |
| Made all industry-standard packages available | Advancing the packaging technology for more powerful products |
|
>>> Reliable performance <<< |
>>> Unmatched industry leadership <<< |
Further advancement of Infineon´s unique .XT interconnection technology (e.g. in discrete housings TO-263-7, TO-247-4) serves to overcome the common challenge of improving semiconductor chip performance while maintaining its thermal capability. The thermal capability is now 12% better for the new generation, boosting the chip figures-of-merit to a new level of SiC performance.
Featured products
| CoolSiC™ MOSFETs 400 V G2 | ||||
| RDS(on) max [mΩ] 18 V |
RDS(on) typ [mΩ] 18 V |
TOLL | D2PAK-7 | |
| 14.4 | 11.3 | IMT40R011M2H | IMBG40R011M2H | |
| 15.0 | 19.1 | IMT40R015M2H | IMBG40R015M2H | |
| 25.4 | 32.1 | IMT40R025M2H | IMBG40R025M2H | |
| 36.4 | 45,7 | IMT40R036M2H | IMBG40R036M2H | |
| 44.9 | 56.2 | IMT40R045M2H | IMBG40R045M2H | |
| CoolSiC™ MOSFETs 650 V G2 | ||||
| RDS(on) max [mΩ] 18 V |
RDS(on) typ [mΩ] 18 V |
TO-247-3 | TO-247-4 | D2PAK-7 |
| 62 | 50 | IMW65R050M2H | IMZA65R050M2H | IMBG65R050M2H |
| 49 | 40 | IMW65R040M2H | IMZA65R040M2H | IMBG65R040M2H |
| 24 | 20 | IMW65R020M2H | IMZA65R020M2H | IMBG65R020M2H |
| 18/21 | 14.5 / 16 | IMW65R015M2H | IMZA65R015M2H | IMBG65R015M2H |
| 8.5 | 6.7 / 7 | IMBG65R007M2H | ||
| CoolSiC™ MOSFET 1200 V G2 | |
| G2 RDS(on) [mΩ] | D2PAK-7 (TO-263-7) Generation 2 |
| 8 | IMBG120R008M2H |
| 12 | IMBG120R012M2H |
| 17 | IMBG120R017M2H |
| 22 | IMBG120R022M2H |
| 26 | IMBG120R026M2H |
| 34 | IMBG120R034M2H (available soon) |
| 40 | IMBG120R040M2H |
| 53 | IMBG120R053M2H |
| 78 | IMBG120R078M2H |
| 116 | IMBG120R116M2H |
| 181 | IMBG120R181M2H |
| 234 | IMBG120R234M2H |
Videos
CoolSiC™ discrete MOSFET Generation 2
Power conversion solutions that guarantee high energy efficiency are key to reaching decarbonization goals and achieving unlimited green energy. SiC based power electronics boost energy efficiency compared to Si alternatives in many cases. To speed up the implementation of clean energy and energy efficiency in a global world Infineon is releasing the second generation of CoolSiC™ MOSFETs.
Introducing Infineon CoolSiC™ MOSFET discrete 650 V G2
Be familiar with Infineon's CoolSiC™ MOSFET discrete 650 V generation 2, know its key features, target application and benefits and understand its positioning compared to other technologies.
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Infineon I CoolSiC™ - Empowering the Next Era of High-performance Power Conversion Systems
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Infineon CoolSiC™ MOSFETs and Diodes
Infineon's portfolio includes CoolSiC™ Schottky diodes, CoolSiC™ hybrid models, CoolSiC™ MOSFET modules and discretes, plus EiceDRIVER™ gate driver ICs for driving SiC devices.
Read More