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EBV - Nexperia - Silicon Carbide MOSFETs (HB)

Nexperia Silicon Carbide MOSFETs

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Silicon Carbide (SiC) MOSFETs

Raising the bar for safe, robust and reliable power switching

Nexperia’s new industry leading 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ RDSon values. Following on from Nexperia’s late-2023 release of two discrete SiC MOSFETs in 3 and 4-pin TO-247 packaging these are the latest offering in a series which will see its SiC MOSFET portfolio swiftly expand to include devices with RDSon values of 17, 30, 40, 60 and 80 mΩ in flexible package options.

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Features and benefits

  • Excellent RDSon temperature stability
  • Very low switching losses
  • Fast reverse recovery
  • Fast switching speed
  • Temperature independent turn-off switching losses
  • Very fast and robust intrinsic body diode
  • Faster commutation and improved switching due to the additional Kelvin source pin

 

Applications

  • E-vehicle charging infrastructure
  • Photovoltaic inverters
  • Switch mode power supply
  • Uninterruptable power supply
  • Motor drives

 

EBV - Nexperia - Silicon Carbide Products Table
Product Datasheet Buy now
NSF030120D7A0 DOWNLOAD BUY NOW
NSF040120D7A0 DOWNLOAD BUY NOW
NSF060120D7A0 DOWNLOAD BUY NOW
NSF080120D7A0 DOWNLOAD BUY NOW
NSF040120L3A0 DOWNLOAD BUY NOW
NSF080120L3A0 DOWNLOAD BUY NOW
NSF040120L4A0 DOWNLOAD BUY NOW
NSF080120L4A0 DOWNLOAD BUY NOW

 

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