SiC MOSFETs
The portfolio of Silicon Carbide (SiC) MOSFETs from onsemi are designed to be fast and rugged. Silicon Carbide (SiC) MOSFETs have a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy bad gap, and 3x higher thermal conductivity.
onsemi portfolio of 650 V Silicon Carbide (SiC) MOSFETs
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onsemi portfolio of 900 V Silicon Carbide (SiC) MOSFETs
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onsemi portfolio of 1200V Silicon Carbide (SiC) MOSFETs
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1700V
onsemi portfolio of 1700 V Silicon Carbide (SiC) MOSFETs
SiC Diodes
The portfolio of Silicon Carbide (SiC) diodes from onsemi include AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive and industry applications. Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.
onsemi portfolio of 650 V Silicon Carbide (SiC) diodes
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onsemi portfolio of 1200 V Silicon Carbide (SiC) diodes
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1700V
onsemi portfolio of 1700 V Silicon Carbide (SiC) diodes
Related Technologies
Isolated gate drivers
The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications. onsemi Gate Drivers provide features and benefits that include High system efficiency high reliability.
- NCD57xxx: Isolated High Current and high efficiency IGBT gate driver
- NCV57xxx: Automotive IGBT gate Driver, Isolated high current and high efficiency with internal galvanic isolation
- NCP51705: SiC MOSFET driver, low-side, single 6 A high-speed
- NCV51705: Automotive SiC MOSFET driver, low-side, single 6 A high-speed