STMicroelectronics STPOWER SiC Diodes
Boosting the performance of power converters
SiC diodes are high performance power Schottky rectifiers that feature a silicon carbide substrate. This wide bandgap material enables the design of 650V high-voltage Schottky diodes. They present negligible reverse recovery at turn-off and minimal capacitive turn-off behaviour which is independent of temperature. The very low VF series of 650 V Rectifiers offers the lowest diodes forward voltage drop for optimal efficiency.
The very high efficiency behaviour of SiC diodes coupled with ST’s high level of quality ensures the best results for your designs and applications. ST’s SiC diodes take advantage of silicon carbide’s superior physical characteristics over Si only, with 4 times better dynamic characteristics and 15% less forward voltage (VF) versus the fastest 600 V silicon diode. In hard-switching applications, SiC Schottky diodes show a significant power-loss reduction. Today, they are also widely used in the industry for AC/DC converters.
ST's portfolio of automotive diodes and rectifiers qualified to the AEC-Q101 standard
![ST Rectifiers MappingDiodes_680x380.ai ST Rectifiers MappingDiodes_680x380.ai](/wcm/connect/ffd0875b-83b6-48fe-89b6-e8babebdb736/1x1.png?MOD=AJPERES&CACHEID=ROOTWORKSPACE-ffd0875b-83b6-48fe-89b6-e8babebdb736-lHyCzDx)
Click on the image to enlarge
Product highlight
ebv content library/home/products/product-highlights/wide-bandgap-technology-overview/stpower-sic-mosfet/sic-diodes/ebv - wide bandgap - st - sic diodes intro static html
EBV - Wide Bandgap - ST - SiC Diodes Intro Static HTML