Driving efficiency takes pole position
The world needs to be more energy efficient. Governments across the globe are stipulating mandates to reduce automotive CO₂ emissions to combat climate change and maintain resources. Obviously the main focus is on the drivetrain – whether that is combustion, hybrid, or full electrical. However innovative technologies and systems for powertrain, chassis, safety, lighting and body electronics are helping drive up overall vehicle efficiency and reducing fuel consumption, CO₂ emissions and costs. Consistently delivering the right functionality, with the right performance, in the right package is how Nexperia is helping ‘driving efficiency’ win.
- MOSFETs
- IVN
- Rectifiers
- Transistors
Automotive Trench 9 - Power MOSFETs designed for performance and endurance
Nexperia’s latest automotive Power MOSFET portfolio, which includes the 0.9 mOhm RDS(on) 220 A DC-rated BUK9J0R9-40H, delivers improved performance and reliability due to our unique combination of Trench 9 superjunction technology and LFPAK packaging capability.
Nexperia’s latest AEC-Q101 Trench 9, 40 V automotive superjunction MOSFETs in the rugged, electrically- and thermally-efficient LFPAK56 deliver improved performance and reliability along with a footprint reduction of up to 81% when compared to traditional solutions.
As well as reducing RDS(on) to below 1 mOhm, the new devices feature an improved DC current rating of 220 A – a first for the automotive Power-SO8 footprint. This enables higher power density on a small footprint, particularly valuable for safety-critical automotive applications requiring dual redundant circuitry. The use of superjunction technology also delivers a higher Avalanche capability and Safe Operating Area (SOA) for improved performance under fault conditions.
Features:
- Growing number of standard level MOSFETs, ranging from 0.9 mΩ to 3.5 mΩ
- Improved DC current rating of 220 A – a first for the automotive Power-SO8 footprint
- Higher Avalanche capability and Safe Operating Area
- Automotive AEC-Q101 qualified. Exceeding 2x Q101 testing on key reliability tests:
- TC – temperature cycling
- HTGB – High temperature gate bias
- HTRB – High temperature reverse bias
- IOL – Intermittent operating life
Key benefits:
- Improved power density with lower RDS(on) in same footprint (0.9 mΩ)
- Improved efficiency through lower RDS(on) and improved switching performance
- Exceptional single shot and repetitive avalanche performance, improved SOA
- Replacement for DPAK and D2PAK alternatives provides up to 81% space efficiency
Search now: BUK7J1R0-40HX | BUK7J1R4-40HX | BUK7Y1R4-40HX | BUK7Y1R7-40HX | BUK7Y2R0-40HX | BUK7Y2R5-40HX | BUK7Y3R0-40HX | BUK7Y3R5-40HX | BUK9J0R9-40HX | BUK9Y1R6-40HX | BUK9Y1R9-40HX | BUK9Y2R8-40HX
DFN2020 – squeezing in more power under the hood
Nexperia’s AEC-Q101 qualified, 175 °C rated, DFN2020 MOSFETs with side-wettable flanks for AOI, give designers a space saving option for under the hood applications.
As we continue to add electronic functionality under the hood, the demand for component miniaturization and increased power density grows. However, from a quality and reliability perspective under the hood semiconductors need to be rated to 175 °C and offer full automatic optical inspection (AOI) capabilities. With the launch of Nexperia’s first AEC-Q101 qualified MOSFETs in the 2 x 2 mm DFN2020 package rated to 175 °C and with side-wettable flanks for AOI, designers now have a weight and space saving option for applications operating in the 1 A to 10 A range with a maximum power of 15 W.
This latest addition to our automotive MOSFET portfolio expands the range of options designers have for under the hood applications. It enables greater flexibility in selecting the best electrical and thermal performance to meet specific application requirements. Designers can choose from a broad range of power and RDS(on) values in both our extremely robust LFPAK packages and now in this smaller 2 x 2 mm package. With both N-channel and P-channel options these new DFN2020 devices are particularly suited to medium-current load-switching applications and DC/DC conversion for motor management.
Search now: BUK6D23-40EX | BUK9D23-40EX | BUK6D43-40PX | BUK6D43-60EX | BUK6D120-60PX
In-vehicle Networking (IVN) ESD protection
Nexperia’s new PESDxIVN series uses the latest generation of automotive qualified protection technology - the ideal and future-proof choice to safe-guard network transceivers.
High-performance ESD protection: High ESD robustness up to 30 kV and high surge currents up to 3.5 A (8/20µs), excellent ESD clamping behavior with low device capacitance, and AEC-Q101 qualified.
Ready to meet a growing demand: As electronic content in cars grows, more and increasingly complex networking solutions are required, and the PESDxIVN series is produced using Nexperia‘s high-capacity in-house manufacturing infrastructure.
Efficient & future-proof design: Easy drop-in replacements of legacy devices in SOT23, SOT323 and SOD323, and the new silicon of PESDxIVN is ready for the next generation of automotive qualified leadless (DFN) packages.
Target applications: ESD protection for In-vehicle networking lines in automotive environments and CAN, LIN, FlexRay, SENT.
LIN (local interconnected network)
LIN controls systems such as driver assistance, automatic door locking or windows-lifters, is used for communication with miscellaneous smart sensors, for instance to detect rain. Our devices feature an asymmetrical internal diode configuration, ensuring optimized electromagnetic immunity for the protected LIN ECU.
Search now: PESD1IVN27-AX | PESD1IVN27-UX | PESD1IVN24-AX | PESD1LIN,115
CAN (controller area network)
CAN bus systems are also used for driver assistance, along with body control modules like antilock breaking system (ABS), engine management system or power control. Our devices protect two automotive CAN bus lines, and they can be used with high speed and fault-tolerant CAN buses.
Search now: PESD2IVN24-TR | PESD2IVN24-UX | PESD2IVN27-UX | PESD1CANVL | PESD2CAN,215
FlexRay
FlexRay can be applied in electronic systems where safety is paramount, for instance Drive-by-Wire. Our devices support the FlexRay data rate of 10 Mbit/s. In addition they provide a surge capability of up to 200 W per line for an 8/20 μs pulse.
Search now: PESD2IVN24-TR | PESD2IVN24-UX | PESD2IVN27-UX | PESD1FLEX,215
Schottky rectifiers in CFP
Ideal for automotive applications, our Schottky rectifier portfolio in CFP meets the challenging demands of efficient and space-saving designs. Clip-bonded Flat Power (CFP) packages with high power capabilities offer a true alternative to SMA, with better thermal performance.
High-performance, broad range: Three product groups and package types ensure the best fit for your power circuitry. Very low forward voltage drop and low leakage for highest efficiency. Junction temperature up to 175 °C and AEC-Q101 qualified. VR max: 20-100 V; IF max: 1-15 A.
Advanced CFP packaging: Solid copper clip for high thermal performance and power dissipation while reducing package inductance for improved switching behavior. Innovative silicon and reduced package resistance for better electrical performance.
Space-saving and future-proof: Small, thin and light design with secure supply in high volumes. Package and portfolio extensions planned as well as replacements for previous-generation SMx-packaged devices.
Low VF Schottky rectifiers (Planar)
Enhanced design efficiency through small size, flexibility and performance
One key trend in switched-mode power supply (SMPS) design is for ever smaller systems. Our products support this trend, at the same time providing the reliable and safe operation you require to enable the most efficient SMPS applications. Choose from a variety of configurations, performance parameters and packages to get the best match for your needs.
Search now: PMEGx (CFP3) | PMEGx (CFP5) | PMEGx (CFP15)
Low VF & Low IR Schottky rectifiers (Trench)
Helping you extend battery life with essential solutions
Our AEC-Q101 qualified low voltage-drop MEGA (Maximum Efficiency General Application) Schottky diodes offer high performance and high efficiency. Space saving in small packages, the MEGA Schottky family exemplifies our commitment to developing these essential multimarket solutions.
Search now: PMEGx (CFP3) | PMEGx (CFP5) | PMEGx (CFP15)
Ultra-low IR Schottky rectifiers (Low leakage Planar)
Helping you extend battery life with essential solutions
Our AEC-Q101 qualified low voltage-drop MEGA (Maximum Efficiency General Application) Schottky diodes offer high performance and high efficiency. Space saving in small packages, the MEGA Schottky family exemplifies our commitment to developing these essential multimarket solutions.
Search now: PMEGx (CFP3) | PMEGx (CFP5) | PMEGx (CF15)
Full power in half the footprint
First bipolar transistors in LFPAK/Power-SO8
These high-power bipolar transistors, housed in LFPAK56 (Power-SO8) packages, deliver DPAK-like thermal and electrical performance in just half the footprint. Offering reliable, energy-efficient performance, they are AEC-Q101 qualified and support high-temperature operation (175 °C).
Features and benefits:
- 27 types up to 100 V and 15 A in single and double configurations
- High power dissipation (Ptot)
- Suitable for high-temperature applications (175 °C)
- Space-saving 5 x 6 mm package outline is half the size of equivalent transistors in DPAK, SOT223, and other packages
- Low profile (1 mm)
- High reliability and mechanical ruggedness thanks to solidcopper clip (no wires)
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
- Future-proof, growing portfolio
High power transistors: single
Meeting the challenges of high efficiency operation
In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions help you meet this design challenge.
High power transistors: double
Full power in half the footprint
These high-power bipolar transistors, housed in LFPAK56 (Power-SO8) packages, deliver DPAK-like thermal and electrical performance in just half the footprint. Offering reliable, energy-efficient performance, they are AEC-Q101 qualified and support high-temperature operation (175 °C).
Search now: PHPT610030NKX | PHPT610035NKX | PHPT610030PKX | PHPT610035PKX | PHPT610030NPKX
High-current, high power transistors
Meeting the challenges of high efficiency operation
In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions help you meet this design challenge.
Search now: PHPT60406NYX | PHPT60406PYX | PHPT60410NYX | PHPT60410PYX | PHPT60415NYX | PHPT60415PYX | PHPT60606NYX | PHPT60606PYX | PHPT60610NYX | PHPT60610PYX | PHPT61006NYX | PHPT61006PYX | PHPT61010NYX | PHPT61010PYX
Nexperia
BUK9J0R9-40H
Nexperia’s latest AEC-Q101 Trench 9, 40 V automotive superjunction MOSFETs in the rugged, electrically- and thermally-efficient LFPAK56 deliver improved performance and reliability along with a footprint reduction.
Automotive Trench 9 - Power MOSFETs designed for performance
Nexperia’s latest automotive Power MOSFET portfolio delivers improved performance and reliability due to our unique combination of Trench 9 superjunction technology and LFPAK packaging capability.
DFN2020 – squeezing in more power under the hood
Nexperia’s AEC-Q101 qualified, 175 °C rated, DFN2020 MOSFETs with side-wettable flanks for AOI, give designers a space saving option for under the hood applications.