Navitas GaNFast™ Power ICs
GaNFast power ICs are the ultimate embodiment of next-generation power semiconductor technology in an easy-to-use, high-performance, extremely reliable format
A gallium nitride (GaN) power integrated circuit (IC) combines several power electronics functions onto a single GaN chip, to improve speed, efficiency, reliability and cost-effectiveness. In many cases, GaN power ICs are the enabling catalyst for advanced power-conversion topologies to transition from academic concepts to industry-proven mass production designs.
The key to improved performance is to create what approaches the ‘ideal switch’, i.e. a circuit building block that translates a minimum-energy digital signal into lossless power delivery.
Using lateral 650 V eMode GaN-on-Si technology, Navitas’ proprietary AllGaN™ process design kit (PDK) was created to enable the monolithic integration of GaN FET and GaN drive, plus logic and protection functions. The die can then be packaged into industry-standard, low-inductance, low-cost, 5×6 or 6×8 mm QFN packages for off-line AC or 400 V DC-input applications.
Both ‘single’ and ‘half-bridge’ GaN power ICs are available, with a broad range of power and functionality, and adaptable for a wide range of applications from tens of watts to kW in markets from mobile fast chargers, to data centers, consumer, renewables and EV / eMobility.
Half-bridge circuits are essential building blocks in the power electronics industry, used in everything from smartphone chargers to electric vehicles. High-frequency operation shrinks magnetics and other passive components to enable dramatic reductions in size, cost and weight while delivering faster charging. However, in half-bridge circuits, providing power and signal to a floating high-side switch at such frequencies have eluded the industry as silicon devices have been too slow and suffer from parasitic impedances between the driver and FET, high-capacitance silicon FETs and poorly performing level-shifter/isolators. GaN half-bridge power ICs including critical drive, logic, protection and power features eliminate the losses, costs and complexity associated with traditional half-bridge solutions.
The world’s first GaN power ICs deliver high frequency and high efficiency simultaneously, enabling a high-speed revolution in power electronics.
GaN power ICs enable up to 3x faster charging in half the size and weight of old, silicon-based power electronics, or 3x more power without a size or weight increase.
What is a GaNFast™ Power IC?
GaNFast is the trademark describing Navitas‘ proprietary GaN power ICs. GaNFast is also used in consumer-facing branding and co-operative marketing programs.
GaNFast power ICs are easy-to-use, high-speed, high-performance ‘digital-in, power-out’ building blocks. Integration enables virtually zero loss in turn-off because the gate drive loop has essentially zero impedance. In addition, turn-on performance can be controlled and customized for specific application requirements.
Benefits
- Smaller
GaNFast power ICs enable 3x faster charging in half the size and weight of old, slow silicon-based solutions – and with up to 40% improvement in energy savings.
- Faster
The integrated design of GaN power ICs makes them very easy to use. With simple ‘digital-in, power-out’ operation, layout and control is simple. Features such as dV/dt slew-rate control and under-voltage lockout ensure that GaN power ICs maximize the chance of first-time-right designs, which minimize time to market.
- Greener
Due to small die-size, fewer manufacturing process steps and integrated functionality, GaN power ICs have a 10x lower CO2 footprint than silicon-based solutions. At a higher-level assembly, GaN-based chargers have half the manufacturing and shipping CO2-footprint of silicon designs.
Applications
- Mobile
- Consumer
- Data Center
- Renewable/Solar
- EV/eMobility
- Industrial Motor Drive
silica content library/npi/2022/navitas-gan-fast-power-ics
Navitas GaNFast Power ICs | Avnet Silica
