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Nexperia 650V IGBT discretes

Robust and cost-effective medium and high-voltage solutions

3d view of nexperia 650v igbt discretes

In Nexperia's carrier stored trench-gate advanced field-stop (FS) IGBT portfolio, the 650 V IGBTs deliver high ruggedness reliability and enhanced inverter power density for industrial applications. That is ideal for more traditional power applications such as Heating, Ventilation, and Air Conditioning (HVAC) systems as well as electric welding and induction heating. But also for power conversion and motor drives in current system including renewable energy (photovoltaic (PV) strings, heat pumps), EV-chargers and 5 – 20 kW (20 kHz) industrial servo motors for robotics.

 

Features & benefits

  • Low conduction and switching losses
  • Stable and tight parameters for easy parellel operation
  • Maximum junction temperature of 175 °C
  • With fully rated or half rated soft fast reverse recovery diode
  • RoHS compliant, lead-free plating
  • HV-H3TRB qualified

 

Applications

  • Power inverters
    • Uninterruptible Power Supply (UPS) inverter
    • Photovoltaic (PV) strings
    • EV charging
  • Induction heating
  • Welding

 

Product portfolio

High speed trench field-stop IGBT with full rated silicon diode Collector current IC [typ] (A) Datasheet
NGW40T65H3DFP 40 Download datasheet
NGW50T65H3DFP 50 Download datasheet
NGW75T65H3DFP 75 Download datasheet

 

Medium speed trench field-stop IGBT with full rated silicon diode Collector current IC [typ] (A) Datasheet
NGW30T65M3DFP 30 Download datasheet
NGW40T65M3DFP 40 Download datasheet
NGW50T65M3DFP 50 Download datasheet
NGW60T65M3DFP 60 Download datasheet
NGW75T65M3DFP 75 Download datasheet

 

High speed trench field-stop IGBT with half rated silicon diode Collector current IC [typ] (A) Datasheet
NGW40T65H3DHP 40 Download datasheet

 

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