Nexperia GaN FETs
Maximised power density with leading efficiency
Whether for low- or high-power conversion applications, power Gallium Nitride FETs (GaN FETs) are increasingly making their way into mainstream markets. For a variety of high-voltage and low-voltage applications GaN FETs deliver the fastest transition/ switching capability (highest dv/dt and di/dt), and best power efficiency. Additionally, Nexperia power GaN FETs bring enhanced power density through reduced conduction and switching losses.
Product portfolio
- Low voltage e-mode GaN FETs
- 650 V e-mode GaN FETs
- Bi-directional GaN FETs
- 650 V cascode GaN FETs
- Low voltage e-mode
- 650 V e-mode
- Bi-directional
- 650 V cascode
Low voltage e-mode GaN FETs
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for high-power <200 V applications. Offering superior switching performance due very low QC and QOSS values. Enabling faster charging for e-mobility and wired/wireless changing systems as well as significant space and BOM savings in LiDAR and lower noise in Class D audio amplifiers.
Features & benefits
- Enhancement mode transistor-normally off power switch
- Ultra-high switching frequency
- Leading soft-switching performance
- No reverse-recovery charge
- Low gate charge, low output charge
- High performance (>99% efficiency)
- Tight dynamic characteristics
- Easy to drive, 0 to 5 V gate drive
- Qualified for industrial applications according to JEDEC standard
Key applications ≤150 V high-power
- 400 V-48 V LLC converter for datacenters
- 48 V to POL direct conversion
- Power supply (AC/DC) fast-charging for e-mobility
- USB-C power delivery fast-charging for portables
- LiDAR (non-automotive)
- Class D audio amplifiers
Product portfolio
| Product | Description | Datasheet |
|---|---|---|
| GANE1R8-100QBA | 100 V, 1.8 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) | *February 2025 |
| GANE2R7-100CBA | 100 V, 2.7 mOhm Gallium Nitride (GaN) FET in a 4.45 mm x 2.30 mm Wafer Level Chip-Scale Package (WLCSP) | *February 2025 |
| GAN3R2-100CBE | 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) | Download datasheet |
| GANE7R0-100CBA | 100 V, 7.0 mOhm Gallium Nitride (GaN) FET in a 2.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP) | *February 2025 |
| GANE3R9-150QBA | 150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) | Download datasheet |
| GAN7R0-150LBE | 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package | Download datasheet |
650 V e-mode GaN FETs
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for low-power 650 V applications. Offering superior switching performance due very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion. As well as bringing significant space and BOM savings in BLDC and micro servo motor drives or LED drivers.
Features & benefits
- Enhancement mode transistor-normally off power switch
- Ultra-high switching frequency
- Leading soft-switching performance
- No reverse-recovery charge
- Low gate charge, low output charge
- High performance (>99% efficiency)
- Tight dynamic characteristics
- Easy to drive, 0 to 5 V gate drive
- Qualified for industrial applications according to JEDEC standard
Key applications 650 V low-power
- Datacom and telecom (AC/DC and DC/DC)
- Photovoltaic (PV) micro inverter (DC/AC)
- Industrial (DC/AC)
- BLDC / micro servo motor drives
- LED driver
- TV power supply unit (PSU)
Product portfolio
| Product | Description | Datasheet |
|---|---|---|
| GAN080-650EBE | 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package | Download datasheet |
| GAN140-650EBE | 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package | Download datasheet |
| GAN140-650FBE | 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package | Download datasheet |
| GAN190-650EBE | 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package | Download datasheet |
| GAN190-650FBE | 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package | Download datasheet |
| GANE350-650FBA | 650 V, 350 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package | *February 2025 |
| GANE600-650FBA | 650 V, 600 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package | *February 2025 |
| GANE140-700BBA | 700 V, 140 mOhm Gallium Nitride (GaN) FET in DPAK package | *February 2025 |
| GANE190-700BBA | 700 V, 190 mOhm Gallium Nitride (GaN) FET in DPAK package | *February 2025 |
| GANE240-700BBA | 700 V, 240 mOhm Gallium Nitride (GaN) FET in DPAK package | *February 2025 |
| GANE350-700BBA | 700 V, 350 mOhm Gallium Nitride (GaN) FET in DPAK package | *February 2025 |
Bi-directional GaN FETs
Nexperia’s bi-directional GaN FETs are ideal for power applications where voltage blocking and current conduction are important functions. For example, they deliver a superior solution when replacing conventional back-to-back silicon MOSFETs in Battery Management Systems (BMS). Guaranteeing low conduction losses and ultra-high switching speed capability as well as delivering significant space savings (smallest footprint). They also bring these benefits when applied as over-voltage protection (OVP), switching circuits for multiple power sources and high side load switches in bidirectional converters.
Features & benefits
- Enhancement mode transistor-normally off power switch
- Ultra-high switching frequency
- Leading soft-switching performance
- No reverse-recovery charge
- Low gate charge, low output charge
- High performance (>99% efficiency)
- Tight dynamic characteristics
- Easy to drive, 0 to 5 V gate drive
- Qualified for industrial applications according to JEDEC standard
Key applications 40 V bi-directional
- High-side load switch
- OVP protection in smart phone USB port
- DC-to-DC converters
- Power switch circuits
- Stand-by power system
Product portfolio
| Product | Description | Datasheet |
|---|---|---|
| GANB012-040CBA | 40 V, 12 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.2 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) | *February 2025 |
| GANB1R2-040QBA | 40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) | *February 2025 |
| GANB4R8-040CBA | 40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP) | Download datasheet |
| GANB8R0-040CBA | 40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) | Download datasheet |
650 V cascode GaN FETs
Performance, efficiency, reliability.
The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as industry 4.0 and renewable energy applications. Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, they deliver unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems.
Features & benefits
- 3 times lower inductances than industry-standard packages for lowest switching losses & EMI
- Higher reliability compared to wire-bonded solutions
- 99% power conversion efficiency
- Up to 1 MHz in soft-switching (high power density)
- Easy to design gate drive, 0 to 12 V
- Low Rth( j-mb) typ for optimal cooling & 175 °C rated
- Virtually no Qrr
- Flexible gull winged leads for temperature cycling & board level reliability
- MSL1 & Halogen free qualifications
Key applications 650 V high-power
The path to Net Zero CO2
- Solar (PV) inverters
- Server Titanium grade power supplies
- Battery storage/ UPS inverters
- Heat pumps
Industry 4.0
- Servo motor drives/ frequency inverters
- Telecom power supplies
- Class-D Audio amplifiers
- Welding machines
Product portfolio
| Product | Description | Datasheet |
|---|---|---|
| GAN039-650NBB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package | Download datasheet |
| GAN039-650NTB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | Download datasheet |
| GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | Download datasheet |
| GAN111-650WSB | 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package | Download datasheet |
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