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ST SiC MOSFETs Diodes Title (MT)

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STMicroelectronics STPOWER SiC MOSFETs & Diodes

ST SiC MOSFETs Diodes intro (LC)

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Higher power density for your automotive and industrial applications

STPOWER SiC MOSFETs and Diodes are based on innovative wide bandgap materials (WBG), that offer higher power density for automotive and industrial applications, enabling smaller and lighter power designs featuring higher power density.

With an extended range of voltage, rating from 650 to 2200 V, ST’s silicon carbide MOSFETS feature excellent switching performance combined with very low on-state resistance RDS(on) per area.

ST SiC Diodes are available from 600 to 1200 V with single and dual diodes encapsulated in package sizes from DPAK to TO-247, including the ceramic insulated TO-220AB/AC offering great flexibility to designers looking for efficiency, robustness and fast time-to-market. This family of devices offers a significant power-loss reduction, commonly used in motor drives and uninterruptible power supplies (UPS). ST’s automotive-grade 650 and 1200 V SiC diodes – AEC-Q101-qualified and PPAP capable – feature the lowest forward voltage drop (VF) on the market, for optimal efficiency in electric vehicle (EV) applications.

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STEVAL-DPSTPFC1 evaluation board from ST

 

The main features and benefits of ST's STPOWER SiC MOSFETs and SiC Diodes include:

SiC MOSFETs

  • Automotive Grade (AG) qualified devices
  • Very high temperature handling capability (max. TJ = 200 °C)
  • Very low switching losses (minimal variation versus temperature) allowing to work at very high switching frequency
  • Low on-state resistance over the temperature range
  • Simple to drive
  • Very fast and robust intrinsic body diode proved
  • Gate drive compatible with existing ICs
  • 7 Years Longevity program certified, To support customers design investments by ensuring 7 years minimum devices availability from the notification date.
     

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SiC Diodes

  • Industrial- and Automotive Grade (AG) qualified devices
  • High temperature handling capability (max. TJ = 175 °C)
  • Very low Forward Voltage Drop (VF) for 650 V (1.45 V – 1.75 V) and 1200 V (1.5 V) devices.
  • Very low switching losses (minimal variation versus temperature) allowing to work at very high switching frequencies
  • High power integration with dual diodes for reduced PCB form factor
  • Significant reduction of power converter size and cost
  • Low EMC impact, for simplified certification and reduced time-to-market

 
 

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Resources

STMicroelectronics 7 kW bidirectional AC-DC converter (MM)

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7 kW bidirectional AC-DC converter

The STEVAL-7BIDIRCB is a solution for a 7 kW bidirectional charger, consisting of two stages:

  • bidirectional three-channel interleaved totem pole PFC working at fixed frequency in continuous conduction mode (CCM). The three-channel interleaved PFC architecture guarantees the highest efficiency in a wide load range.
  • bidirectional resonant full bridge CLLC with synchronous rectification. The CLLC uses frequency modulation to regulate the output.
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STMicroelectronics 7 kW bidirectional AC-DC converter PCIM2024

ST’s ADP480120W3 SiC Module and McLaren Applied’s IPG5 800V Inverter: An object lesson for EV markets

Why did McLaren Applied use ST’s ADP480120W3 silicon carbide power module in their IPG5 800V traction inverter? The question is more complex and more urgent than it may appear.

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ST Blog Article 25 Years of SiC (MM)

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25 years of SiC at ST and the new era ahead

What happened in 1996? Bill Clinton was re-elected President of the United States. General Motors was the biggest American company. Apple was trading at about 22 cents per share. IBM’s Deep Blue became the first computer to beat the current world’s chess champion, Garry Kasparov. And ST started collaborating with the University of Catania on silicon carbide (SiC) which is transforming electric vehicles today.

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ST Blog Article History of SiC (MM)

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History of Silicon Carbide on the ST blog

To celebrate the first 8-inch SiC wafer officially announced last month and after recently celebrating 25 years of silicon carbide at ST and the beginning of a new era, we are offering a timeline of major blog posts addressing silicon carbide and how it’s been shaping the industry. A quarter of a century ago, everything started on one-inch wafers and a close relationship with academia.
 

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ST SiC Making Industry Smarter Video

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Win a free STEVAL-DPSTPFC1 evaluation board

The STEVAL-DPSTPFC1 3.6 kW bridgeless totem pole boost circuit achieves a digital power factor correction (PFC) with inrush current limiter (ICL). It helps you to design an innovative topology with the latest ST power kit devices: a silicon carbide MOSFET (SCTW35N65G2V), a thyristor SCR (TN3050H-12WY), an isolated FET driver (STGAP2S) and a 32-bit MCU (STM32F334).

Submit the form below for a chance to win the STEVAL-DPSTPFC1 evaluation board.

 
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Prod STMicroelectronics STEVAL-DPSTPFC1 (RM)

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STMicroelectronics

STEVAL-DPSTPFC1

STEVAL-DPSTPFC1 - 3.6 kW Totem Pole PFC with inrush current limiter reference design using TN3050H-12WY and SCTW35N65G2V

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