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SiC Solutions for EV Charging

As a truly global megatrend, all EV chargers need to use electrical energy in the most effective way. For every type of charge point, at every voltage, the need for highly efficient energy conversion is universal. That’s what silicon carbide brings to EV charging. 

Technology developed by onsemi is defining the global EV charging infrastructure. This includes its EliteSiC MOSFET modules, delivering power levels of 350 kW to charge EVs faster and more economically. EliteSiC-based power modules from onsemi have been endorsed by leaders in the automotive industry. These modules are in production electric vehicles now, delivering longer ranges, higher efficiency, and faster acceleration.

Advanced discrete and modular solutions enable traction inverters to generate higher levels of torque. Efficiency here extends the range of the vehicle and the lifetime of the electrical drive train.

Integrated single side direct cooling (SSDC) power modules from onsemi, compatible with onsemi’s IGBT modules, use its second generation EliteSiC MOSFETs to deliver higher performance and better efficiency, all with onsemi’s industry-leading quality.

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EliteSiC Diodes

The EliteSiC Diodes portfolio from onsemi includes AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive and industry applications. Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.

650V

onsemi's portfolio of 650 V EliteSiC diodes

 

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1200V

onsemi's portfolio of 1200 V EliteSiC diodes

1700V

onsemi's portfolio of 1700 V EliteSiC diodes

EliteSiC MOSFETs

The EliteSiC MOSFET portfolio from onsemi is designed to be fast and rugged. Silicon Carbide (SiC) MOSFETs have a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy bad gap, and 3x higher thermal conductivity.

650V

onsemi's portfolio of 650 V EliteSiC MOSFETs

 

900V

onsemi's portfolio of 900 V EliteSiC MOSFETs

1200V

onsemi's portfolio of 1200V EliteSiC MOSFETs

1700V

onsemi's portfolio of 1700 V EliteSiC MOSFETs

 

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Evaluation/Development kits

 

Related Technologies

Isolated gate drivers

The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications. onsemi Gate Drivers provide features and benefits that include High system efficiency high reliability.

  • NCD57xxx: Isolated High Current and high efficiency IGBT gate driver
  • NCV57xxx: Automotive IGBT gate Driver, Isolated high current and high efficiency with internal galvanic isolation
  • NCP51705: SiC MOSFET driver, low-side, single 6 A high-speed
  • NCV51705: 0 Automotive SiC MOSFET driver, low-side, single 6 A high-speed

 

Digital Isolator Parts

IGBTs and IGBT Modules

Resources

Access your full informational toolkit with more than 20 SiC design assets!

 

onsemi EliteSiC Solutions

Overview

Technical article

Designing, simulating, and testing a design topology requires advanced technical expertise and significant investment in costly research and development, which many companies do not have the resources to commit to.

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Interview: Jon Harper

Watch our interview with onsemi SME, Jon Harper, while he talks about how SiC can be used, where SiC is best used and what SiC may bring to your application.

 

Webinar series

Learn about key challenges, trade-offs and compromises needed in building DC fast charging (DCFC) systems as well as how to design, build and validate DCFC systems using the onsemi SiC 25 kW module-based DCFC system ref design.

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