As a truly global megatrend, all EV chargers need to use electrical energy in the most effective way. For every type of charge point, at every voltage, the need for highly efficient energy conversion is universal. That’s what silicon carbide brings to EV charging.
Technology developed by onsemi is defining the global EV charging infrastructure. This includes its EliteSiC MOSFET modules, delivering power levels of 350 kW to charge EVs faster and more economically. EliteSiC-based power modules from onsemi have been endorsed by leaders in the automotive industry. These modules are in production electric vehicles now, delivering longer ranges, higher efficiency, and faster acceleration.
Advanced discrete and modular solutions enable traction inverters to generate higher levels of torque. Efficiency here extends the range of the vehicle and the lifetime of the electrical drive train.
Integrated single side direct cooling (SSDC) power modules from onsemi, compatible with onsemi’s IGBT modules, use its second generation EliteSiC MOSFETs to deliver higher performance and better efficiency, all with onsemi’s industry-leading quality.
- SiC Parts
- Kits
- Technologies
EliteSiC Diodes
The EliteSiC Diodes portfolio from onsemi includes AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive and industry applications. Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.
EliteSiC MOSFETs
The EliteSiC MOSFET portfolio from onsemi is designed to be fast and rugged. Silicon Carbide (SiC) MOSFETs have a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy bad gap, and 3x higher thermal conductivity.
Evaluation/Development kits
- SECO-HVDCDC1362-15W-GEVB: 15 W SiC High-Voltage Auxiliary Power Supply for HEV & BEV Applications
- SECO-GDBB-GEVB: Gate drivers plug-and-play ecosystem
- SECO-HVDCDC1362-40W-GEVB: 40 W SiC high-voltage auxiliary power supply for HEV & BEV applications
- SECO-LVDCDC3064-IGBT-GEVB: 6 - 18 Vdc Input Isolated IGBT Gate Driver Supply +15 V / -7.5 V / 7.5 V with Automotive Qualified NCV3064 Controller
- SECO-LVDCDC3064-SIC-GEVB: 6-18 Vdc Input Isolated SiC Gate Driver Supply +20V/-5V/5V with Automotive Qualified NCV3064 Controller Evaluation Board
Related Technologies
Isolated gate drivers
The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications. onsemi Gate Drivers provide features and benefits that include High system efficiency high reliability.
- NCD57xxx: Isolated High Current and high efficiency IGBT gate driver
- NCV57xxx: Automotive IGBT gate Driver, Isolated high current and high efficiency with internal galvanic isolation
- NCP51705: SiC MOSFET driver, low-side, single 6 A high-speed
- NCV51705: 0 Automotive SiC MOSFET driver, low-side, single 6 A high-speed
- Videos
- Documents
- Whitepaper - Fast DC EV Charging Common Topologies and Power Devices Used in the System
- Whitepaper - SiC MOSFETs: Gate Drive Optimization
- Whitepaper - Optimizing Power Efficiency and Performance for Hybrid and E-Vehicles
- Assembly Guide - VE-Trac Direct-Direct SiC
- App Note - Characteristics and Driving Recommendations - onsemi Gen1 1200V SiC MOSFETs-Modules
- Technical Article - Using a proven silicon carbide solution to get a head start on fast EV charger designs
Technical article
Designing, simulating, and testing a design topology requires advanced technical expertise and significant investment in costly research and development, which many companies do not have the resources to commit to.
Read moreWebinar series
Learn about key challenges, trade-offs and compromises needed in building DC fast charging (DCFC) systems as well as how to design, build and validate DCFC systems using the onsemi SiC 25 kW module-based DCFC system ref design.
Register Now