Diodes Incorporated Silicon Carbide (SiC) MOSFETs are rated to 1200V and can be widely designed in applications for traction inverters and motor drives, which require higher voltage and efficiency. These products work even in severe environments with reliable and robust performance compared to traditional silicon-based components.
Key Features & Applications
Key Features
- Low On-Resistance
- Silicon Nitride AMB substrate for high-reliability
- Optimised intrinsic reverse diode
- Kelvin source and NTC terminals for easy drive
Applications
- Motor drive
- Electrified vehicle traction inverter
- Photovoltaics, wind power generation
- Induction heating equipment
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