Full SiC 25kW DC EV charger platform

SEC-25KW-SIC-PIM-GEVK is a reference design kit for 25kW fast DC EV charger based on SiC power integrated module. This full SiC solution consists of PFC and DC-DC stages featuring multiple 1200V, 10 mohm half-bridge SiC modules NXH010P120MNF1, the ultralow RDS(ON) and minimized parasitic inductance can significantly reduce conduction loss and switching loss. Relying on the powerful Universal Controller Board (UCB) with Zynq®-7000 SoC FPGA and ARM®-based processor the system can deliver maximum 25kW over 200V-1000V output voltage with 96% all-time efficiency to charge 400V or 800V EV batteries.

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onsemi SEC-25KW-SIC-PIM-GEVK (MM)

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SEC-25KW-SIC-PIM-GEVK also highlights the galvanic-isolated high-current driver NCD57000, auxiliary power solution SECO-HVDCDC1362-40W-GEVB to power stable voltage rails to low-voltage components, integrated protections like inrush control, over voltage protection and multiple interfaces for communication.

Read the whole reference design series below Developing A 25-kW SiC-Based Fast DC Charger Part 1- 8 to learn detailed considerations and challenges onsemi has met during the design process.

onsemi SEC-25KW-SIC-PIM-GEVK - front and side view of the ev kit

Whitepaper: Developing a 25 kW SiC-Based DC Fast Charger (DCFC)

DC fast charging (DCFC) market is thriving. Along with the acceleration in the adoption of electric vehicles (EVs), the demand for fast charging infrastructure is increasing. Growth projections range from 20% to 30% CAGR for the next five years. If you are an application, product, or design engineer working in the power electronics field, sooner or later, you could be involved in the design of one of such novel charging systems.

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Bill of Material

PFC

Function Part Number
Power Module NXH010P120MNF1 X3
SiC Gate Driver NCD57000 X6
Voltage Amplifier NCS200034
Current Amplifier NCS213R
General Purpose Amplifier

NCS2032

NCS20034
Digital Isolator NCID9211
SAR ADC NCD9801x
Ethernet - CAN NCV7342

DC-DC

Function Part Number
Power Module NXH010P120MNF1 X4
SiC Gate Driver NCD57000 X8
Voltage Amplifier NCS200034
Current Amplifier NCS213R
General Purpose Amplifier

NCS2032

NCS20034
Digital Isolator NCID9211
SAR ADC NCD9801x
Ethernet - CAN NCV7342

All features

  • Vin=400Vac (EU)/480Vac (US), Vout=200Vdc-1000Vdc
  • Max output power=25kW, efficiency>96%
  • Three-Phase PFC and DAB enables bidirectional power conversion for 400V/800V battery
  • Multiple protecting functions and communication interfaces
  • Following EN55011 Class A & IEC 61851
  • Compatible with the Universal Controller Board (UCB) FPGA/ARM
  • NXH010P120MNF1 - SiC Module, half bridge, 1200V, 10 mohm SiC M1 MOSFET
  • NCD57000 - Isolated high current and high efficiency gate driver

Key Products

Silicon Carbide (SiC) Modules

NXH010P120MNF1

The NXH010P120MNF1 is a EliteSiC MOSFET module containing a 10 mohm 1200V SiC MOSFET half bridge and an NTC thermistor in an F1 module.

onsemi NXH010P120MNF1

Gate Drivers

NCD57000

NCD57000 is a high−current single channel SiC/MOSFET/IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications.

onsemi NCD57000

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Interested in this solution or its key products? Get in touch with our Power experts today and we'll be in touch to help you with your next Power project.

 

PCIM24 Overview

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