Nexperia GAN041-650WSB

Efficient power use is a key industrial challenge and a driver for innovation. Societal pressure and legislation are demanding increasing efficiencies in power conversion and control. For some applications, power conversion efficiency and power density are critical for market adoption. GaN FETs enable smaller, faster, cooler, lighter systems, with lower overall system cost. GAN041-650WSB is a 650 V, 35 mΩ GaN FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Key features

• 99% power conversion efficiency
• Up to 1 MHz in soft-switching (High power density)
• Easy to design gate drive
• 175 °C rated FETs

Additional features

• Ultra-low reverse recovery charge
• R_DS(ON): 35 mΩ (max.)
• Package: TO-247 (SOT429)
• Simple gate drive (0 V to +10 V or 12 V)
• Robust gate oxide (±20 V capability)
• High gate threshold voltage (+4 V) for very good gate bounce immunity
• Very low source-drain voltage in reverse conduction mode
• Transient over-voltage capability
• Ultra-low inductance
• Low thermal resistance
• Integrated very low V_f body diode.
  • No external antiparallel diode required

Applications

• Solar inverters (Single phase)
• Industrial automation (Servo drives)
• Industrial SMPS
• Battery Storage and Uninterrupted power supplies (UPS)
• OBC and DC/DC
• Server & telecom SMPS