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Analog & Power Management

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Power Up with Toshiba!

Toshiba Electronics Europe GmbH (TEE) draws on many decades of experience serving the power sector - providing engineers with highly-integrated solutions that keep pushing the performance envelope. Through continued innovation, in semiconductor topologies plus the packaging employed, we play a pivotal role in making power system designs more efficient, reliable, compact and feature rich. Our MCUs are redefining motor control, our optical isolators protecting circuitry and people and our MOSFETs allowing support for faster power supply switching speeds. New technologies such as wide-bandgap open up new horizons to reach higher levels of performance, efficiency and smaller form factors.

Technological advances from Toshiba are being applied across a broad array of different sectors.

In robotics - enabling complex multi-axis movements through sophisticated motor control.
In domestic appliances - helping OEMs to develop energy-saving, eco-friendly products.
In industrial drives - ensuring efficient operation is maintained and avoiding downtime.
In EV charging applications – enabling higher efficiency and faster charging.

LEARN MORE

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Industrial I Components

650V SiC Schottky Barrier Diodes	DTMOSVI 650V Series Superjunction MOSFETs	U-MOS IX-H Low-spike-type 40V N-channel power MOSFET
U-MOS X-H 80V Series N-channel Power MOSFETs	Compact intelligent power device (IPD) with 600V rating	Smart Gate Driver - Dual output IGBT / MOSFET driver

Automotive I Components

100V N-channel MOSFETs with 5x6mm package Low Voltage MOSFET with smaller packages

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Industrial I Components
Automotive I Components

Industrial I Components

650V SiC Schottky Barrier Diodes

2nd Generation of devices offer higher current density

With densities up to 50% higher than the first generation, Toshiba's devices and can handle significantly higher forward surge currents. The use of SiC semiconductors helps designers to improve efficiency, reduce heat dissipation and save space in high-speed power switching designs. SiC power devices also offer stable operation over a wider temperature range than silicon alternatives – even at high voltages and currents.

Key product:

SiC Schottky barrier diodes

Applications:

Power factor correction (PFC) at power supply
Photovoltaic inverters
Uninterruptible power supplies (UPS)

Features	Advantages	Benefits
Low leakage current and low V_F Low thermal runaway of I_R High surge current I_FSM Lower switching loss due to thinner wafer	Higher efficiency PFC operation Increased thermal margin High operation frequency allow small filter	Improved system performance Reduced form factor Reduced cooling requirements Lower system costs

Product link:

TRS16N65FB/TRS24N65FB

DTMOSVI 650V Series Superjunction MOSFETs

New devices for more efficient switching power supplies

The new 650V-rated N-channel power MOSFETs strengthen Toshiba's latest DTMOSVI series with highly appealing performance parameters. These devices offer designers a 40% reduction in terms of their drain-source on-resistance x gate-drain charge (Q_GD) figure of merit (FoM) when compared to the previous DTMOS generation. As a consequence, they can raise the efficiency of switch-mode power supplies thereby enabling a substantial decrease in switching losses, compared to the previous generation.

Key product:

DTMOSVI Facts

Applications:

Switching power supplies in industrial equipment
Data centers and
Power conditioners of photovoltaic generators

Features	Advantages	Benefits
Best in class FoM: R_(on)* Q_GD product (-40% vs previous generation DTMOS IV-H) Packages with a Kelvin source pin: DFN 8x8, TO247-4	Combination of lower conduction and switching losses	Higher efficiency switching allows lower heat generation and smaller form factor Smaller form factor can help to reduce costs

Product links:

U-MOS IX-H Low-spike-type 40V N-channel power MOSFET

Reduces EMI in switching power supply application

Utilizing excellent high-speed performance, TPHR7404PU`s small 5 x 6mm SOP Advance package and extraordinary low 0.71°C/W channel-to-case thermal resistance makes the device suitable for efficiency-focused, compact power solutions. Low spike performance MOSFETs will simplify designers job and help to avoid EMI issue.

Key product:

TPHR7404PU

Further links:

General U-MOS overview:

Applications:

Power tools; DC/DC converter synchronous rectifier

Features	Advantages	Benefits
Low spike & high efficiency switching max 0,74Ohm (10V) increased Gate switching Voltage	Less EMI related reworks Low conduction losses Less probability for self turn on	Faster time to market Low heat dissipation Simplifying design process

U-MOS X-H 80V Series N-channel Power MOSFETs

Devices can significantly enhance power supply efficiency

TPH2R408QM and TPN19008QM are based upon Toshiba's latest generation U-MOSX-H process that exhibit a reduction of around 40% in drain-source on-resistance (R_ds(ON)) compared to corresponding 80V products in earlier processes.

Key product:

TPH2R408QM

Applications:

Telecom Power supply
Industrial Power supply synchronous rectification at 24~28V output Voltage
Motor drive Power stage at 36V power Tool

Features	Advantages	Benefits
Lowest R_ds(ON) in Form factor available Excellent low FoM R_ds(on) x Q(oss) and R_ds(on)x Q(sw) 5x6 mm package SOP Adv “N” style for improved compatibility tj: 175°C	Low conduction loss High efficiency switching More thermal head room	Lower heat generation Smaller space consumption Helps to reduce costs

Compact intelligent power device (IPD) with 600V rating

Efficient operation reduces power consumption of motor equipment

The TPD4162F is suitable for any applications with input signals in the range up to 220V AC. It contains a PWM circuit, 3-phase decoder, level shifting high-side driver and low side driver with embedded IGBTs and FRDs. Multiple protection features include current limit, over current protection (OCP), thermal shutdown and undervoltage lockout (UVLO).

Key product:

TPD4162F

Applications:

Air conditioners
Air cleaners
Pumps

Features	Advantages	Benefits
Rated power supply voltage (V_BB) up to 450V HSSOP31 surface mount package 17.5 x 11.9mm footprint, 2.2mm height	Allows reduction of the power dissipation of the motor equipment Offers approx. 10% reduced power dissipation compared to its predecessor	Reduces need for peripheral circuits Allows for compact designs including the ability to mount the driver circuitry directly to the motor

Smart Gate Driver - Dual output IGBT / MOSFET driver

Enhanced device includes comprehensive fault detection to simplify circuit design

The TLP5231 is equipped with additional built-in functionality, incorporating overcurrent detection, implemented by sensing VCE(sat) as well as undervoltage lock out (UVLO), both of which provide an open collector fault signal to the primary side. These new features significantly ease the process of gate drive circuit design.

Key product:

TLP5231

Applications:

Industrial inverters
Uninterruptible power supplies (UPS)
Power conditioners for solar energy
Power conditioners for motor controls

Features	Advantages	Benefits
Smart Gate Driver with built-in protection circuit Dual output driver Peak output current +/- 2.5 A	Can drive P-channel and N-channel MOSFET No external protection circuit needed	Simplifies design tasks SO16L package with high isolation performance for safety critical applications

Features

Advantages

Benefits

Smart Gate Driver with built-in protection circuit
Dual output driver
Peak output current +/- 2.5 A

Can drive P-channel and N-channel MOSFET
No external protection circuit needed

Simplifies design tasks
SO16L package with high isolation performance for safety critical applications

Automotive I Components

100V N-channel MOSFETs with 5x6mm package

Highly efficient devices in SOP Advance (WF) package for the first time

Designed specifically for modern 48V system applications, the devices are suited to use in boost converters for integrated starter generators (ISG) and LED headlights as well as motor drives, switching regulators and load switches. They are available in a small surface mount SOP Advance wettable flanks package.

Key products:

XPH4R10ANB/XPH6R30ANB

Applications:

Automotive equipment
Power supply (DC/DC converter) and LED headlights, etc. (motor drives, switching regulators and load switches)

Features	Advantages	Benefits
U-MOS series of 100V N-channel SOP Advance(WF) 5x6mm package R_ds(on)max of just 4.1 mΩ AEC-Q101 qualified	V_DSS of 100V suitable for 48V system applications Narrow V_th for easy parallel connection Wettable flanks package allows optical inspection of solder joints	Total power losses can be significantly reduced Use less MOSFETs when parallel connection for superior performance Smaller, more compact designs could be achieved

Low Voltage MOSFET with smaller packages

Higher density and less power losses

These devices meet the increasing need of the industry for smaller, efficient MOSFETs. They are part of Toshiba`s smaller package portfolio which offer a wide choice of package sizes ranging from 1x1 mm-class ultra-small packages to 3x3 mm, which contributes to miniaturization of sets by reducing the mounting area and increasing power density. By combining latest wafer processes with low-resistance packaging technologies, an industry-leading level of low on-resistance MOSFET is achieved.

Key products:

SSM6K809R/SSM6K810R/SSM6K819R

Applications:

Motor drives
DC-DC converter
Switching regulator for automotive

Features	Advantages	Benefits
U-MOS series of 100V N-channel SOP Advance(WF) 5x6mm package R_ds(on)max of just 4.1 mΩ AEC-Q101 qualified	V_DSS of 100V suitable for 48V system applications V_DSS of 60V suitable for 24V system applications Narrow V_th for easy parallel connection Wettable flanks package allows optical inspection of solder joints	Total power losses can be significantly reduced Use less MOSFETs when parallel connection for superior performance Smaller, more compact designs could be achieved

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