onsemi’s Insulated Gate Bipolar Transistor (IGBT) portfolio offers cutting-edge solutions for high-efficiency energy conversion across various applications. The latest offering includes 7th generation field-stop technology, available in power modules and discrete packages. The next generation of solutions can enable up to 10% more output power compared to competing products while providing higher efficiency. This increased power density and lower power loss result in lower total system costs for applications such as heat pumps, HVAC, industrial motor drives, solar inverters, and energy storage systems.
Featured IGBT products
onsemi AFGB30T65SQDN
Using the novel field stop 4th generation IGBT technology and AEC-Q101 Qualified. AFGB30T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.
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onsemi AFGB40T65RQDN
Using novel field stop IGBT technology, onsemi's new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is short-circuit rated and offers a high figure of merit with low conduction and switching losses.
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onsemi AFGH4L25T120RW
AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.
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IGBT Modules
| IGBT Modules | Product Information |
|---|---|
| NFVF97565L1ZT1 | NFVF97565L1ZT1 is an advanced automotive smart power module providing a fully-featured, high-performance full bridge inverter output stage for Exciter Motor Application. |
| NXH600N105L7F5S1HG | The NXH600N105L7F5S1HG is power integrated module(PIM) containing an I-type NPC three level inverter with 1050 V FS7 IGBTs and 1050 V Extremefast Diodes. The module contains an NTC thermistor. |
| NXH160T120L2Q2F2S1 | The NXH160T120L2Q2F2SG is a power integrated module (PIM) containing a split T-type neutral point clamped three-level inverter, consisting of two 160 A/1200 V half-bridge IGBTs with inverse diodes, two neutral point 120 A/1200 V rectifiers, two 100 A/650 V neutral point IGBTs with inverse diodes, two half-bridge 60 A/650 V rectifiers and a negative temperature coefficient thermistor (NTC). |