onsemi’s Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) portfolio delivers best-in-class efficiency, reliability, and thermal performance for next-generation power solutions across automotive, industrial, energy infrastructure, and AI and datacenter markets. Leveraging advanced silicon and silicon carbide technology alongside innovative packaging, these MOSFETs minimize energy losses and handle higher power in a small footprint, resulting in cooler operations and higher power density. Ideal for applications like vehicle electrification, industrial automation, energy infrastructure, and AI/cloud computing.
onsemi SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower on-state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.
There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.
Features
- 40% RSP Reduction vs. Previous Tech
- 2X Reduction in EON and EOFF losses
- Lower QRR and stable over temperature range
- Rugged gate oxide
- Fully integrated manufacturing
Benefits
- Achieve Higher Power Density
- Reduce Switching Losses and Improve Efficiency
- Reduce Ringing, Overshoot, and EMI/Noise
- Stable operation over temperature range
- 15V, 18V and 20V ON gate drive compatible
- 0V, -3V and -5V OFF gate drive compatible
Market Demand
- Reduce losses
- Improve power density
- Compact from factor
- Reliability
- High Gate Oxide Robustness
Featured Applications & Products
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- 650V
- 1200V
- T10
650V Applications
- Cloud, Telecom, AI (AC/DC & DC/DC Power converters)
- 48V Power Supply Unit
- Rack Power Supply
- Motor Drive
- Next generation of efficient single phase connected drives
- Residential/Commercial Solar, Energy Storage, Uninterruptible Power Supply
- DC-DC non-isolated Boost stages
- DC-DC Isolated converters
- Single phase DC-AC Inverters
- Single phase AC-DC Power Factors
Product portfolio
| Industrial | Automotive | Blocking Voltage BVDSS (V) | ID(max) (A) | RDS(on) Typ @ 25°C (mΩ) | Package Type |
|---|---|---|---|---|---|
| NTBG015N065SC1 | NVBG015N065SC1 | 650 | 176 | 15.3 | D2PAK7 (TO-263-7L HV) |
| NTHL015N065SC1 | NVHL015N065SC1 | 650 | 163 | 15 | TO-247-3LD |
| NTH4L015N065SC1 | 650 | 164 | 15.6 | TO-247-4 | |
| NVH4L015N065SC1 | 650 | 142 | 12 | TO-247-4 | |
| NTBG045N065SC1 | NVBG045N065SC1 | 650 | 74 | 43.5 | D2PAK7 (TO-263-7L HV) |
| NTHL045N065SC1 | NVHL045N065SC1 | 650 | 66 | 42 | TO-247-3LD |
| NTH4L045N065SC1 | NVH4L045N065SC1 | 650 | 66 | 48.8 | TO-247-4 |
1200V Applications
- Cloud, Telecom, AI (AC/DC & DC/DC Power converters)
- 3-Phase AC in 48V Power Supply Unit
- 3-Phase AC Rack Power Supply
- Motor Drive
- Next generation of efficient 3-phase connected drives
- Residential/Commercial Solar, Energy Storage, Uninterruptible Power Supply
- High Voltage DC-DC non-isolated Boost stages
- High Voltage DC-DC Isolated converters
- 3-phase DC-AC Inverters
- 3-phase AC-DC Active Front End
Product portfolio
| Industrial | Automotive | Blocking Voltage BVDSS (V) | ID(max) (A) | RDS(on) Typ @ 25°C (mΩ) | Package Type |
|---|---|---|---|---|---|
| NTBG020N120SC1 | NVBG020N120SC1 | 1200 | 98 | 20 | D2PAK7 (TO-263-7L HV) |
| NTHL020N120SC1 | NVHL020N120SC1 | 1200 | 103 | 20 | TO-247-3LD |
| NTH4L020N120SC1 | NVH4L020N120SC1 | 1200 | 102 | 20 | TO-247-4 |
| NTBG040N120SC1 | NVBG040N120SC1 | 1200 | 60 | 40 | D2PAK7 (TO-263-7L HV) |
| NTHL040N120SC1 | NVHL040N120SC1 | 1200 | 60 | 40 | TO-247-3LD |
| NTH4L040N120SC1 | NVH4L040N120SC1 | 1200 | 58 | 40 | TO-247-4 |
| NTHL080N120SC1A | NVHL080N120SC1A | 1200 | 31 | 80 | TO-247-3LD |
| NTBG080N120SC1 | NVBG080N120SC1 | 1200 | 30 | 80 | D2PAK7 (TO-263-7L HV) |
| NTH4L080N120SC1 | NVH4L080N120SC1 | 1200 | 29 | 80 | TO-247-4 |
| NTBG160N120SC1 | NVBG160N120SC1 | 1200 | 19.5 | 160 | D2PAK7 (TO-263-7L HV) |
| NTHL160N120SC1 | NVHL160N120SC1 | 1200 | 26 | 160 | TO-247-3LD |
| NTH4L160N120SC1 | NVH4L160N120SC1 | 1200 | 17.3 | 160 | TO-247-4 |
| NTH4L022N120M3S | NVH4L022N120M3S | 1200 | 88 | 22 | TO-247-4 |
T10 (NTXX, NVXX)
Shielded Gate Power Trench MOSFET technology used in T10 MOSFETs significantly improves efficiency. T10 technology shows reduced Input, output and Miller (or reverse) capacitances for same RDS(on). This leads to enhanced figures of merit through lower on resistance RDS(on) time gate charge (QG).
In DC-DC application, the improved Figure of Merit (FOM) (RDS(on) x QOSS / QG / QGD) boosts overall performance and efficiency.
The new T10 technology embedded the best industry-leading fast, soft and low recovery body diode (QRR, TRR). Lowering reverse recovery minimizes ringing, overshoot, and noise. In both, DC-DC power conversion and BLDC motor control applications, this feature maximizes operation efficiency during freewheeling period and/or in synchronous rectifier operation.
T10 technology uses reduced wafer thickness, cutting the substrate contribution to RDS(on) from approximately 50% to 22% in 40V MOSFETs without compromising switching performances.
To drive T10 MOSFET, low and medium voltage drivers are available and can be paired with NCP5156x and NCV5156x.
Features
- 30%-40% RSP Reduction vs. Previous Tech
- 2X Reduction in QG, QSW, and QOSS
- Softer Recovery Diode and Lower QRR
- 10% Higher UIS Capability
Benefits
- Achieve Higher Power Density
- Reduce Switching Losses and Improve Efficiency
- Reduce Ringing, Overshoot, and EMI/Noise
Market Demand
- Reduce losses
- Improve power density
- Compact from factor
- Reliability
Applications
- Cloud and Computing, AI (AC/DC & DC/DC Power converters)
- 48V Power Supply Unit (Datacenter)
- 48V (IBC) Intermediate Bus Converter, DC/DC
- 12V Power Supply Unit (Server)
- Hot-swap
- Telecom and Datacom (AC/DC & DC/DC Power converters)
- 54V Power Supply Unit
- 48V (IBC) Intermediate Bus Converter, DC/DC
- 36V – 75Vi DC/DC Bricks
- Hot-swap
- Motor Drive & Battery Power Management
- Power Tools
- Battery Pack
- Forklift
- E-Bike
- Robots/Cobots (AGV/AMR)
- DC/DC and DC/AC Inverter
- Solar Optimizer
- Micro-Inverter
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Other MOSFET products
| Low/Medium Voltage MOSFETs | Product Information | Small Signal MOSFETs | Product Information | MOSFET Modules | Product Information |
|---|---|---|---|---|---|
| ATP113 | ATP113 is P-Channel Power MOSFET, -60 V, -35 A, 29.5 mΩ, Single ATPAK for General-Purpose Switching Device Application. | FDA69N25 | UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. | FAM65CR51ADZ1 | Power integrated MOSFET module with boost converter stage for multi-phase and semi-bridgeless power factor correction (PFC) with Diodes. |
| ATP304 | ATP304 is P-Channel Power MOSFET -60 V, -100 A, 6.5 mΩ, ATPAK. | EFC4626R | EFC4626R is N-Channel Power MOSFET, 24 V, 5 A, 46.2 mΩ, Dual EFCP. | FTCO3V85A1 | The FTCO3V85A1 is an 80 V low Rds(on) automotive qualified power integrated module (PIM), featuring a 3-phase MOSFET bridge optimized for Automotive 48 V-12 V interleaved DC -DC converter system, It includes a precision shunt resistor for current sensing, an NTC for temperature sensing, and an RC snubber circuit. The module utilizes ON’s trench MOSFET technology and it is designed to provide a very compact and high efficiency solution for DC-DC converter system. The Power module is 100% lead free, RoHs and UL compliant. |
| FDB070AN06A0 | N-Channel PowerTrench® MOSFET 60 V, 80 A, 7 mΩ, The latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. | FDA032N08 | This N-Channel MOSFET is produced using PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. | NXV08H250DPT2 | 80 V 0.71 mΩ Automotive Dual Half Bridge Mosfet Power module for 6 phase inverter for 48 V mild hybrid vehicle, with pressfit signal pins, electrically isolated DBC substrate, temp sense and Automotive Qualified. |