Avnet Silica and onsemi provide your direct path to reliable EliteSiC solutions
New semiconductor technologies are closing the efficiency gap, helping us use electricity in the most effective and efficient way. The semiconductor industry is fundamental to the way we control energy conversion and manage its distribution. Silicon carbide provides greater control over power conversion, covering AC-DC, DC-AC and DC-DC. Thanks to its unique features, silicon carbide (SiC) delivers higher levels of efficiency.
Through strategic growth, onsemi has developed its own end-to-end SiC supply chain and total control over the quality and reliability of SiC at every manufacturing stage. This domain expertise is used to create SiC diodes, SiC MOSFETs and SiC modules that can be used in every application where the benefits of SiC technology provide a competitive advantage.
There are many applications where SiC plays a role. Avnet Silica and onsemi are committed to helping you find the best solution for your application. The Energy Infrastructure combines the three biggest application areas for SiC. This includes electric vehicles, renewable energy, and energy storage.
The energy infrastructure is experiencing huge and rapid growth. Demand for energy is only increasing as we move towards the era of full electrification. The focus is on creating an energy infrastructure that generates lower harmful emissions. SiC is one of the key technologies enabling this greener future.
The energy infrastructure will make this transition possible through new ways to control electricity. Connecting energy generation with energy consumption in the most efficient way will be critical. Energy conversion at the point of use will also become more efficient.
Avnet Silica and onsemi are working together to deliver the SiC solutions needed to realize a greener, cleaner energy infrastructure.
Read more about SiC in the energy Infrastructure.
Featured solutions
onsemi SiC JFETs
onsemi's SiC JFETs are an excellent choice for engineers due to their superior performance characteristics derived from Silicon Carbide's inherent properties. They offer exceptionally low on-resistance (Rds(on)) and high current handling capability, which leads to reduced power losses and enhanced efficiency in demanding applications. Furthermore, their robustness and excellent thermal performance ensure higher reliability and enable operation at higher temperatures, simplifying thermal management in your designs.
Simulation Tools
Building a complex electronic application and need some insights through system-level simulations?
Check out onsemi’s simulators:
Elite Power Simulator and Self Service PLECS Model Generator
Webinar
Novel system-level simulators to develop virtual prototype of complex DC Fast Charging system design
Register NowTechnical article
Designing, simulating, and testing a design topology requires advanced technical expertise and significant investment in costly research and development, which many companies do not have the resources to commit to.
Read more- NCP51561
- NCV51561
- NCP51513
- NCV51511
NCP51561 Drivers
The NCP51561 is a high-performance isolated dual-channel gate driver designed to meet the rigorous demands of modern power electronics applications. It features a robust drive capability with 4.5-A source and 9-A sink peak current, making it ideal for fast switching of power MOSFETs and SiC MOSFET power switches. The device offers short and matched propagation delays, ensuring precise timing and synchronization in high-speed applications. Each of the two independent gate driver channels is galvanically isolated with a 5 kVrms (UL1577 rating) rating, providing flexibility in configurations such as two low-side, two high-side switches, or a half-bridge driver with programmable dead time. NCP51561 supports a high working voltage of up to ~1,200 VDC due to its internal functional isolation between the secondary-side drivers for industrial applications.
NCV51561 Drivers
The NCV51561 is a high-performance isolated dual-channel gate driver designed to meet the rigorous demands of modern power electronics applications. It features a robust drive capability with 4.5-A source and 9-A sink peak current, making it ideal for fast switching of power MOSFETs and SiC MOSFET power switches. The device offers short and matched propagation delays, ensuring precise timing and synchronization in high-speed applications. Each of the two independent gate driver channels is galvanically isolated with a 5 kVrms (UL1577 rating) rating, providing flexibility in configurations such as two low-side, two high-side switches, or a half-bridge driver with programmable dead time. NCV51561 supports a high working voltage of up to ~1,200 VDC due to its internal functional isolation between the secondary-side drivers for automotive applications.
NCP51513 Gate Driver
NCP51513 is 130 V half bridge driver with high drive current capabilites and options for DC-DC power supplies and inverters. NCP51513 offers best in class propagation delay, low quiescent current and low switching current at high frequencies of operation. This device is tailored for highly efficient power supplies operating athigh frequencies. NCP51513 can be offered in two versions for propagation delays. With filter version, it has a typical 50 ns propagation delay, while without filter version it has a typical propagation delay of 20 ns. Internal 80 ns dead time and interlock function protect the output MOSFETs against cross conduction events. Enable functionality provides additional system flexibility and helps reducing power consumption.
NCV51511 Gate Driver
The NCV51511 is high side and low side gate-drive IC designed for high voltage, high-speed, driving MOSFETs operating up to 80 V. The NCV51511 integrates a driver IC and a bootstrap diode. The driver IC features low delay time and matched PWM input propagation delays, which further enhance the performance of the part. The high speed dual gate driver are designed to drive both the high-side and low-side of N-Channel MOSFETs in a half bridge or synchronous buck configuration. The floating high-side driver is capable of operating with supply voltages of up to 80 V. In the dual gate driver, the high side and low side each have independent inputs which allow maximum flexibility of input control signals in the application. The PWM input signal (high level) can be 3.3 V, 5 V or up to VDD logic input to cover all possible applications.
Si/SiC Hybrid and SiC Modules
| Si/SiC Hybrid Modules | Product Information | Silicon Carbide (SiC) Modules | Product Information |
|---|---|---|---|
| NXH100B120H3Q0 | The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50 A/1200 V IGBTs, two 20 A/1200 V SiC diodes, and two 25 A/1600 V anti-parallel diodes for the IGBTs. | NVXK2PR80WXT2 | 1200V 80mΩ 31A Full Bridge Power Module with temperature sensing and the lowest thermal resistance for DC-DC and On Board Charger in xEV. |
| NXH300B100H4Q2F2 | The NXH300B100H4Q2 is a three channel flying capacitor boost module. Each channel contains two 1000 V, 100 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. | NVXK2TR40WXT | EliteSiC MOSFET Power Module 40 mOhm, 1200 V, in Dual H -Bridge configuration, AlN DBC substrate. |
| NXH600B100H4Q2F2S1G | The NXH600B100H4Q2F2S1G is a three channel Flying Capacitor Boost module. Each channel contains two 1000 V, 200 A IGBTs and two 1200 V, 60 A SiC diodes. The module contains an NTC thermistor. | NVXK2VR80WDT2 | 1200V 80mΩ 20A 3 Phase Bridge Power Module with temperature sensing for PFC On Board Charger in xEV. |
Working on a power project?
Our experts bring insights that extend beyond the datasheet, availability and price. The combined experience contained within our network covers thousands of projects across different customers, markets, regions and technologies. We will pull together the right team from our collective expertise to focus on your application, providing valuable ideas and recommendations to improve your product and accelerate its journey from the initial concept out into the world.