A SiC JFET is a compelling technology for fast-growing markets positioned to gain share from Silicon-based super-junction (SJ) MOSFETs and other semiconductor solutions such as GaN, in the industrial end-market.
Categories:
- Silicon Carbide (SiC) JFETs
- Silicon Carbide (SiC) Cascode JFETs
- Silicon Carbide (SiC) Combo JFETs
All these devices are optimised for use in Power Supply Units (PSUs) and downstream high-voltage DC-DC conversion to handle the enormous power requirements of future AI Data Centre Racks. In addition, they improve efficiency and safety by replacing multiple components with a solid-state switch based on SiC JFETs in EV battery disconnect units. Furthermore, they enable certain Energy Storage topologies and Solid-State Circuit Breakers (SSCBs).
What separates onsemi's JFETs from the rest?
onsemi SiC JFETs
onsemi SiC combo-FETs
onsemi SiC cascode JFETs
Four reasons to choose onsemi's SiC JFET or Combo JFET for Circuit Protection Applications
- 1) Coolest operation
- 2) Smallest space
- 3) Dependable
- 4) Easy to use
- Lowest on-resistance per chip area (RSP) >>> Lowest power losses
- Normally ON (SiC JFET) or normally OFF (Cascode JFET)
- Minimal Part Count: Heat budget and paralleling
- Stacked Chips: SiC JFET + Si MOSFET in one package, “Combo JFET”
- Combined functions: On-Chip temperature sensing
- Combined functions: JFET or Combo JFET as current sensor
- Voltage rating: 750V provides the necessary safety margin
- Rugged: dependable switching
- Simple construction
- Safely switches off very high currents (e.g., 600 A)
- Simple drive method – the benefits of this are compatibility with standard gate drivers, and flexible drive options
- Simplified design: Wide gate voltage range
onsemi Addresses Design Trends
| Design trend | How onsemi support this trend | |||
|---|---|---|---|---|
|
✔ Ultra - Fast Response Time |
SiC JFETs SiC Combo JFETs SiC Cascode JFETs |
650 V – 1700 V |
16 A – 588 A |
from 4.3 mΩ |
| SiC MOSFETs | 650 V – 1700 V | 4.2 A – 163 A | from 12.0 mΩ | |
| ✔ Safety ✔ Compact and Lightweight |
Gate Drivers |
Galvanic Isolated Junction Isolated Non-Isolated |
capable to drive all required portfolio of transistors (Si MOSFETs, SiC MOSFETs, SiC JFETs) |
|
| ✔ Safety | GFCI Controllers | NCS37021, and variety of GFCI compliant devices that detect hazardous current paths to ground and ground to neutral faults. | ||
An excellent choice for demanding applications
onsemi's SiC JFETs are an excellent choice for engineers due to their superior performance characteristics derived from Silicon Carbide's inherent properties. They offer exceptionally low on-resistance (Rds(on)) and high current handling capability, which leads to reduced power losses and enhanced efficiency in demanding applications. Furthermore, their robustness and excellent thermal performance ensure higher reliability and enable operation at higher temperatures, simplifying thermal management in your designs.
System Solution for Easy Integration – SiC JFETs
SiC JFETs, SiC Cascode JFETs, SiC Combo JFETs
Featured JFET products
onsemi EliteSiC Solutions
New semiconductor technologies are closing the efficiency gap, helping us use electricity in the most effective and efficient way. The semiconductor industry is fundamental to the way we control energy conversion and manage its distribution.
Simulation Tools
Building a complex electronic application and need some insights through system-level simulations?
Check out onsemi’s simulators:
Elite Power Simulator and Self Service PLECS Model Generator
Featured products |
SiC Combo JFET
UG4SC075005L8S - SiC Combo JFET
This Combo-JFET integrates a 750V SiC JFET and a Low Voltage Si MOSFET into a single TOLL package. This approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on SiC JFET.
SiC JFET
UJ4N075004L8S - SiC JFET
The UJ4N075004L8S is a 750 V, 4.3 mohm high-performance Gen 4 normally-on SiC JFET transistor. This device exhibits ultra-low on resistance (RDS(on)) in a compact TOLL package, making it an ideal fit for thermal and space constaints.
SiC Combo JFET
UG4SC075006K4S - SiC Combo JFET
The UG4SC075006K4S "Combo-JFET" integrates both a 750V SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L package. This innovative approach allows users to create circuitry that would enable a normally-off switch.
SiC Cascode JFET
UF4SC120023B7S - SiC Cascode JFET
EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability.
SiC JFET
UJ4N075005K4S - SiC JFET
The UJ4N075005K4S is a 750 V, 4.8mohm high-performance Gen 4 normally-on SiC JFET transistor. This device exhibits ultra-low on resistance (RDS(on)) in a TO-247-4L package, making it an ideal fit to address the challenging thermal constraints.
SiC Cascode JFET
UF3SC120040B7S - SiC Cascode JFET
EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability.
Working on a power project?
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