Wide bandgap: SiC & GaN technologies
Powering the next generation of energy-efficient applications
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With the ongoing shift to renewable energy and the electrification of transport and industry, the demand for higher power and greater energy efficiency in electronics is increasing. There are solar PVs requiring greater efficiency in energy conversion, data servers requiring more and more power, EVs and batteries requiring more storage, and chargers of all kinds needing more power, and faster!
The wide bandgap advantage
The material properties of wide bandgap semiconductors bring many advantages, especially for power-critical applications. The benefits include:
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Higher power
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Higher voltage
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Increased power density
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Greater energy efficiency
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Smaller footprint
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Reduced cooling requirements (reducing size, weight and cost)
And many more.
Cutting through the noise
There's been a lot of buzz around SiC and GaN technologies for quite some time now, especially online. In many ways the internet has made the world a smaller place, putting so much information at our fingertips, but it has also made it more confusing. With so many differing views, all vying for our attention, how do you cut through the noise and complexity? Rather than simply proclaiming the benefits of any one technology (or any one supplier), we take a more considered approach. We'll take the time to understand the full context of your product, your market and your business, and work with you to discover the best approach for you.
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Our power experts and FAEs can offer advice that extends well beyond the datasheet and linecard. We have access to proprietary information from all of our suppliers about their upcoming product roadmaps - which products are being introduced, which are approaching end-of-life, and which companies will be offering which packages, making sure you have a second and third source for your chosen technology.
We can help you decide which supplier is right for you – depending on your application, your designs, your location, your size and which supplier will be able to give you the support you need. Together, we’ll pull together the right team, the right supplier and the right products for your project - and help you get your product out to market faster.
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When you work with Avnet Silica, we’ll pull together the right team of experts to match your needs. We’ll draw from our team of power engineers and FAEs, market specialists and regional experts. You can also leverage the expertise of our supplier network, and third-party services like EMC, magnetics, testing, measurement, and more. We take a full-system approach to support you through the entire product lifecycle. So wherever you’re at, we can help you get where you need to be.
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When you boil it right down, what we really do is help engineers make the right decisions - for your designs, your product, and your business. Everything we do - our power FAEs, our supplier partners, our insights and expertise, are all brought to focus on your project. The expertise, insights and experience we bring to the table can help you accelerate the process and get your product out to market faster.
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GaN, a wide-bandgap semiconductor material, offers advantages over traditional silicon-based technologies, particularly in terms of high-frequency switching capabilities and improved power efficiency. The discussion highlights the unique properties of GaN devices, such as their lateral structure and potential for high-speed switching. While GaN technology holds promise for various applications, including power electronics and RF devices, challenges like electromagnetic interference (EMI) and device reliability need to be addressed. The video also explores the comparison between GaN, silicon carbide, and silicon-based technologies, emphasising the importance of considering specific application requirements and trade-offs.
IGBTs vs Silicon Carbide (SiC)
Thomas Hauer, Power FAE at Avnet Silica, joins Electropages Robin Mitchell to compare Insulated Gate Bipolar Transistors (IGBTs) and Silicon Carbide (SiC) devices for power electronics applications.
IGBT vs SiC: Thomas Hauer's interview with electropages
IGBTs, a mature technology, are known for their high current handling capabilities but suffer from limitations like knee voltage and slower switching speeds. SiC devices, on the other hand, offer advantages such as faster switching speeds, higher efficiency, and better thermal performance. The discussion highlights the increasing popularity of SiC devices, especially in applications like electric vehicles, where their ability to handle high power densities and operate at higher frequencies is crucial. However, challenges associated with SiC devices, such as gate drive complexity and potential for increased electromagnetic interference (EMI), need to be carefully considered. The video concludes by emphasising the importance of selecting the right technology based on specific application requirements and trade-offs between performance, cost, and reliability.
Efficiency Gains of SiC Modules
Silicon carbide’s advantages over IGBTs include lower conduction losses. The linear characteristics of SiC and switching frequency are key to its value. We look at these figures of merit as they apply to SiC modules available now.
Accurate Loss Calculation for SiC Devices
Loss calculations are a critical part of power design. These include conduction and switching losses, and the impact of thermal losses. We look at the tools and methodologies available to help engineers find the right design selection.
Five Ways SiC MOSFET Technology Differs from IGBTs
IGBTs have evolved over time and are still viable and preferred in many applications. In fact, the market for IGBTs is still expanding, with a CAGR of around 10%. So, what are the differences that make one or the other technology suitable for a particular design? The Avnet Silica Power Specialists consider five aspects and how they affect your choice.
Five Things to Consider Before Switching to SiC in Power Conversion
SiC MOSFETs are often presented as an attractive upgrade to older technologies such as IGBTs and Silicon MOSFETs. Although in some limited cases, SiC can be a drop-in replacement, to get maximum benefit, the system should be considered as a whole. To explain more, the Avnet Silica Power Specialists discuss five example areas which affect your design approach.
The Road Ahead for Wide Bandgap Power Devices
We look at the roadmap for SiC and GaN technologies in power applications from both a technology and a supply chain perspective. How will the landscape change over the next few years – will there be even better devices? And can capacity keep up with fast-growing demand?
Maximising GaN Performance with Advanced Digital Control for Power Electronics
The benefits brought by Gallium Nitride (GaN) also introduce challenges in control and optimisation. Programmable digital control offers a solution to these challenges by enabling dynamic adjustments. Combining GaN with digital control is enabling highly efficient, reliable, and scalable power. Rising global demand is driving the need for better power electronics in applications ranging from consumer to e-mobility, data centres, and industrial.
Mitigating Increased Power Demands with Better Power Devices
Can we mitigate the environmental effects by focusing on the positive contribution that developments in power electronics are making? According to the International Energy Agency (IEA), global electricity demand will rise by an average of 3.4% annually over the next three years. This is mostly due to an improved economic outlook, with roughly 85% of this growth coming from developing countries — China, in particular.
Megatrend Applications that Depend on Innovative Power Solutions
Regardless of what the end-product looks like, most power system engineers need similar features from their power supplies: small, reliable, efficient, and able to provide excellent power density and thermal performance. Stating the requirements for power supplies is easy, but meeting these requirements can be extremely difficult. Consumers are always looking for improvements in their devices, such as the latest AI-driven features but with longer battery life. The ever-growing demands on power systems come from booming applications — such as AI and electric vehicles (EVs). We look at some of the technology megatrends that are moulding the world around us.
Choosing Power Components for Maximum Lifetime Value
This article explores the essential factors in selecting power components that maximise lifetime value. From material innovations like wide bandgap (WBG) semiconductors to robust design and environmental resilience, these considerations are essential for reducing field failures and ensuring sustained performance in demanding environments.
Why are WBG Technologies Reshaping the Power Electronics Landscape?
Wide bandgap semiconductors are defined by their larger bandgap energy compared to silicon, enabling them to operate at higher voltages, frequencies, and temperatures. This enhanced performance enables opportunities for applications in electric vehicles (EVs), renewable energy systems, industrial motors, and aerospace technologies. This article explores how WBG technologies reshape the power electronics landscape, their strategic implications for businesses, and the potential for differentiation and innovation.
Advantages of GaN Power Semiconductors
Silicon has traditionally been the semiconductor material of choice and still commands a dominant share of the market. However, gallium nitride (GaN) is emerging as a strong contender for many applications, offering significant advantages over silicon. As a result, GaN is increasingly being chosen for a broad spectrum of power designs and is also making inroads into RF and optoelectronics.
Advantages of SiC Power Semiconductors
What makes SiC and GaN more appropriate for high-power and high frequency power applications? They are wide bandgap (WBG) semiconductors, which gives them several desirable electrical and thermal properties for power applications. This has led to the development of many different SiC-based power components, including Schottky diodes and PiN diodes, as well as metal–oxide–semiconductor field-effect transistors (MOSFETs), junction FETs (JFETs), static induction transistors (SITs) and bipolar junction transistors (BJTs).
Other WBG articles you might like
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Webinar: Unlocking Power Efficiency with onsemi
This webinar series is designed to bring together industry experts and engineers to explore the latest advancements in power electronics. Throughout the day, we will delve into cutting-edge technologies, innovative solutions, and practical applications that are shaping the future of electronics. Join us for a series of insightful sessions, live Q&As, and interactive discussions that will equip you with the knowledge and tools to stay ahead in the rapidly evolving world of power electronics.
Agenda:
- Avnet Silica Intro
- Minimise Power losses with onsemi PowerTrench® T10 Generation of Low and Middle-Voltage MOSFETs
- Next-Gen Motor Drives: Exploring FS7 IGBT and SiC Innovations
- Accelerate your Energy storage system’s design with onsemi’s Discrete and module solutions
- Why Selecting the Right Gate Driver Makes All the Difference for Your Power Application
White Paper
GaN or SiC devices in High-Voltage switching technologies
“What do GaN and SiC bring to power electronics systems, that IGBT, MOSFET and Super Junction MOSFET don’t?” Find out the answers to this and many more in our whitepaper.
Silicon Carbide devices and suitable gate drivers for industrial
In this session you will learn about the latest Silicon Carbide (SiC) devices from ST, as well as a short term technology roadmap. In addition, some particularities of ST SiC MOSFETs will be discussed.
Wide bandgap semiconductor application testing
In this Webinar we will show you how parametric testing and reliability investigations of these devices are done at onsemi and the importance of these tests for applications.
Microchip Technology DC/DC Power Management Solutions
This webinar introduces Microchip's DC/DC regulators, ideal for various applications. From I2C-enabled and battery-powered designs to multi-output systems for MCUs, MPUs, and FPGAs, Microchip's portfolio offers efficient power solutions.
The Microchip Way (leading the way in high quality power)
Microchip presents its most recent solutions to address those areas of the power electronic market which require or get benefit from high quality and reliability control and power semiconductor technologies.
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