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Infineon General-Purpose MOSFETs

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High-voltage MOSFETs 500 V to 900 V

Broad product availability, convenience, and ease of design

Power MOSFETs from the selected high-voltage portfolio can help increase system performance and efficiency.


Note: This table includes only a selection of Infineon’s high-voltage general-purpose MOSFETs. For the complete portfolio overview click here.

Package

Image of TO-252 (DPAK)TO-252 (DPAK)

Image of TO-263 (D2PAK)TO-263 (D2PAK)

Image of TO-220TO-220

Image of TO-220FullPAKTO-220FP

Image of TO-247TO-247

Image of SOT-223SOT-223
Voltage class

500V

IPD50R380CE
RDS(on) = 380 mΩ

          

600V / 650V

IPD60R180P7S
RDS(on) = 180 mΩ

IPD60R360P7S
RDS(on) = 360 mΩ

IPD65R400CE
RDS(on) = 400 mΩ

SPD03N60C3
RDS(on) = 1400 mΩ

IPD60R2K1CE
RDS(on) = 2100 mΩ

SPB20N60C3
RDS(on) = 190 mΩ

SPP20N60C3
RDS(on) = 190 mΩ

IPA60R180P7S
RDS(on) = 180 mΩ

IPA60R360P7S
RDS(on) = 360 mΩ

  

IPN70R600P7S
RDS(on) = 600 mΩ

IPN60R3K4CE
RDS(on) = 3400 mΩ

700V

IPD70R360P7S
RDS(on) = 360 mΩ

IPD70R1K4P7S
RDS(on) = 1400 mΩ

        

IPN70R360P7S
RDS(on) = 360 mΩ

IPN70R1K4P7S
RDS(on) = 1400 mΩ

800V

SPD04N80C3
RDS(on) = 1300 mΩ

SPB17N80C3
RDS(on) = 290 mΩ

SPP17N80C3
RDS(on) = 190 mΩ

SPP04N80C3
RDS(on) = 1300 mΩ

SPA17N80C3
RDS(on) = 290 mΩ

SPA08N80C3
RDS(on) = 650 mΩ

SPW55N80C3
RDS(on) = 85 mΩ

SPW17N80C3
RDS(on) = 290 mΩ

  

900V

        

IPW90R120C3
RDS(on) = 120 mΩ

  

 

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