Toshiba Electronics Europe high voltage MOSFETs (650V)

The 650V-rated TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, and TK210V65Z devices all possess highly appealing performance parameters

The 650V-rated TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, and TK210V65Z devices all possess highly appealing performance parameters. These MOSFETs offer a 40% reduction in terms of their drain-source ON-resistance x gate-drain charge (Q_GD) figure of merit (FoM) when compared to the previous DTMOS generation. As a consequence, they can raise the efficiency of switch-mode power supplies - thereby enabling a substantial decrease in switching losses, compared to the previous generation.

 

Key features

• Very low Q_GD
• Best in class FOM: R_DS(ON) x Q_GD product (FoM)
• Packages with Kelvin source pin available
• Lower heat generation and smaller form factor

 

Additional features

• TK110Z65Z, TK125V65Z, TK170V65Z, and TK210V65Z offer a Kelvin source pin for improved control and efficiency increase potential
• TK110N65Z and TK110Z65Z fit into TO-247 packages with 3 and 4 pins
• TK110A65Z, TK155A65Z, and TK190A65Z come in fully isolated TO-220SIS packages
• TK125V65Z, TK170V65Z, and TK210V65Z are all housed in an 8 x 8 mm DFN package format for surface mounting
• Advantages:
  • Combination of lower conduction + switching losses
  • Higher efficiency switching allows lower heat generation and a smaller form factor
• Benefits:
  • Lowest losses of DTMOS Series
  • Efficiency increase at power supplies
  • Smaller form factor can help to reduce costs

 

Applications

• Switch-mode power supply
• Industrial equipment
• Data centre infrastructure
• Power conditioners of Photovoltaic generators
• Back-up power sources

ebv content library/npi/2020/toshiba-high-voltage-mosfets-650v Toshiba Electronics Europe High Voltage MOSFETs (650V) | EBV Elektronik