GSI Technology Rad-Hard & Rad-Tolerant SRAMs
GSI Technology is excited to introduce several new high performance Radiation-Hardened synchronous SRAMs
A family of SigmaQuad-II+ products are available in 288Mb, 144Mb, and 72Mb densities, x18 and x36 configurations, On-Die Termination (ODT), and up to 350 MHz performance
A family of SyncBurst & NBT products are available in 144Mb, 72Mb, and 36Mb densities, x18 and x36 configurations, and up to 333 MHz performance
These Rad-Hard/RAD-Tolerant SRAMs are expected to serve as a critical element for advanced systems that leverage leading-edge FPGAs, ADCs, and DACs; but until now lacked the high density, high performance, and power efficiency that our outstanding memory products bring. The initial devices will be qualified to Class-Q and Class-V levels to meet the rigorous requirements of aerospace and defense customers.
For our satellite and defense customers that have been anxiously awaiting an alternative to current Rad-Hard memory solutions, our Rad-Hard SRAMs leverage our proven commercial technology and architecture with radiation-hardening, creating an efficient, high performance, leading-edge memory at the 40nm technology node.
For less robust applications, GSI now offers SigmaQuad-II+ Radiation-Tolerant SRAMs as well, offered in all the same options/configurations and fully tested to meet “New Space” requirements.
SigmaQuad-II+ features
- Aerospace-Level Product
- 2.0 clock Latency with DLL on
- 1.0 clock Latency with DLL off
- Optional DLL-controlled output timing
- Can be operated with DLL on or off
- Simultaneous Read and Write SigmaQuad™ Interface
- JEDEC-standard pinout and package
- Dual Double Data Rate interface
- Byte Write controls sampled at data-in time
- Burst of 2 or Burst of 4 Read and Write
- Dual-Range On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs
- 1.8 V +100/–100 mV core power supply
- 1.5 V or 1.8 V HSTL Interface
- Pipelined read operation
- Fully coherent read and write pipelines
- ZQ pin for programmable output drive strength
- Data Valid Pin (QVLD) Support
- IEEE 1149.1 JTAG-compliant Boundary Scan
- RH: 165-bump Ceramic Column Grid Array (CCGA) and 165-bump Land Grid Array (LGA) packages; RT: 165-bump leaded plastic BGA package
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SyncBurst & NBT features
- Aerospace-Level Product
- Single Cycle Deselect (SCD) operation (SyncBurst)
- NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs (NBT)
- 2.5 V or 3.3 V +10%/–10% core power supply
- 2.5 V or 3.3 V I/O supply
- User-configurable Pipeline and Flow Through mode
- LBO pin for Linear or Interleaved Burst mode
- Internal input resistors on mode pins allow floating mode pins
- Default to Interleaved Pipeline mode
- Byte Write (BW) and/or Global Write (GW) operation
- Internal self-timed write cycle
- Automatic power-down for portable applications
- RH:100-pin Ceramic QFP package; RT:100-pin plastic QFP package
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Radiation Performance (Rad-Hard)
- Total Ionizing Dose (TID) > 200krads(Si)
- Single Event Latchup Immunity > 80 MeV.cm2/mg (100°C)
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Radiation Performance (Rad-Tolerant)
- Total Ionizing Dose (TID) > 50krads(Si)
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silica content library/npi/2018/gsi-rad-hard-srams
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