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Nexperia NextPowerS3 Title (MT)

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Nexperia’s NextPowerS3

Nexperia NextPowerS3 Intro (LC)

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Superfast switching with soft recovery

Nexperia’s NextPowerS3 MOSFETs are Safe, Reliable and Efficient.

A high-performance 25V, 30V and 40V MOSFET platform incorporating Nexperia’s unique superjunction technology, with the copper-clip LFPAK package to deliver low RDS(on), as well as demonstrating a continuous current capability up to 380A.

Nexperia offers a “no compromise” parameter selection. Until now power engineers have had to choose between competing MOSFET capabilities, such as low RDS(on) vs. low QG(tot), or fast-switching vs. low spiking, ultimately leading to products that are compromised in terms of efficiency, size, and cost. NextPowerS3 is not the case. Managing to achieve a balance between all key parameters.

The NextPowerS3 family spans across the LFPAK package range (LFPAK33 (SOT1210), LFPAK56 (SOT669), LFPAK56E (SOT1023) and LFPAK88 (SOT1235)) which are completely free of wirebonds, meaning they deliver a competitive RDS(on) (industry best in 25V) as well as low Rth, low inductance and excellent board level reliability. 

Suitable for a wide range of applications including high-efficiency power supplies for telecoms and cloud computing: Or-ing, hotswap synchronous rectification, motor control and battery protection.

BUY SAMPLES

 

Top side view of Nexperia's LFPAK88 package

  • NextPowerS3
  • NextPower 80V/100V

NextPowerS3

Key features

  • Balanced RDS(on) and Qg for class leading efficiency.
  • Unique Schottky Plus technology delivers low spiking without compromising efficiency or IDSS leakage.
  • High reliability LFPAK packages. Copper clip, solder die attach and qualified to 175 C.
  • 4x SOA capability compared to leading competitors.

 

Technology advantage

  • Low RDS(on) MOSFETs minimize conduction (I2R) losses, this is especially important at high loads.
  • Low Qg MOSFETs minimize switching losses, this is important at peak efficiency and in higher frequency designs
  • Figure of Merit ( FoM ) is calculated as the product of the RDS(on) and Qg. NextPowerS3 MOSFETs exhibit low FOMs, indicating performance excellence.

 

Nexperia NextPowerS3 Development

Applications

  • Low RDS(on) types for power ORing , hotswap and soft
  • DC to DC solutions for server and telecoms.
  • Voltage regulator modules (VRM).
  • Point of Load ( PoL )
  • Secondary side synchronous rectification.
  • Brushed and brushless motor control.

Download Handbook

 

NextPowerS3 portfolio

Device
(LFPAK56/E)		 VDS [max] (V) RDS(on) [max]
@ VGS = 10 V
(mΩ)		 Tj [max] (°C) ID [max] (A)
PSMNR51-25YLH 25 0.57 175 380
PSMNR60-25YLH 25 0.7 175 300
PSMNR58-30YLH 30 0.67 175 380
PSMNR70-30YLH 30 0.82 175 300
PSMN0R9-30YLD 30 0.87 150 300
PSMN1R0-30YLD 30 1.02 175 300
PSMN1R2-30YLD 30 1.24 175 250
PSMN2R4-30YLD 30 2.4 175 100
PSMNR90-40YLH 40 0.94 175 300
PSMN1R0-40YLD 40 1.1 150 280
PSMN1R4-40YLD 40 1.4 175 240
PSMN1R0-40YSH 40 1 175 290
PSMN1R5-40YSD 40 1.5 175 240
PSMN1R7-40YLD 40 1.8 175 200
PSMN1R9-40YSD 40 1.9 175 200
PSMN2R0-40YLD 40 2.1 175 180
PSMN2R2-40YSD 40 2.2 175 180
PSMN2R5-40YLD 40 2.6 175 160
PSMN2R8-40YSD 40 2.8 175 160
PSMN3R2-40YLD 40 3.3 175 120
PSMN3R5-40YSD 40 3.5 175 120

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Device
(LFPAK88)		 VDS [max] (V) RDS(on) [max]
@ VGS = 10 V
(mΩ)		 Tj [max] (°C) ID [max] (A)
PSMNR70-40SSH 40 0.7 175 425
PSMNR90-40SSH 40 0.9 175 375
PSMN1R0-40SSH 40 1 175 325

 

Device
(LFPAK33)		 VDS [max] (V) RDS(on) [max]
@ VGS = 10 V
(mΩ)		 Tj [max] (°C) ID [max] (A)
PSMN1R5-25MLH 25 1.8 175 150
PSMN1R6-30MLH 30 1.9 175 160
PSMN1R8-30MLH 30 2.1 175 150
PSMN3R3-40MLH 40 3.3 175 118
PSMN3R3-40MSH 40 3.3 175 118
PSMN4R3-40MLH 40 4.3 175 95
PSMN4R3-40MSH 40 4.3 175 95
PSMN5R0-40MLH 40 5.0 175 85
PSMN5R0-40MSH 40 5.0 175 85
PSMN6R7-40MLD 40 6.7 175 50
PSMN6R7-40MSD 40 6.7 175 50
PSMN8R5-40MLD 40 8.5 175 50
PSMN8R5-40MSD 40 8.5 175 60

 

NextPower 100V power MOSFETs

Market leading Low Qrr performance feature high 175°C rating

Nexperia’s NextPower 100V family of power MOSFETs devices improve switching efficiency, increase reliability and reduce EMI.

With 50% lower RDS(on) and strong avalanche energy rating, they are ideally suited for power supply, telecom and industrial designs, especially suiting USB-PD Type-C chargers and adaptors and 48 V DC-DC adaptors.

The devices feature low body diode losses with Qrr down to 50 nano-coulombs (nC) - resulting in lower reverse recovery current (IRR), lower voltage spikes (Vpeak) and reduced ringing which allows for further optimized dead-time.

The NextPower 100V MOSFETs are available in three packages: TO220 and I2PAK thru-hole devices, and the widely acclaimed LFPAK56 package (SMT).  All package variants feature Tj(max) of 175°C, and fully meet the extended temperature requirements of IPC9592, making NextPower 100V MOSFETs especially suitable for telecom and computing applications.

 

Design benefits

  • Low Qrr for higher efficiency and lower spiking
  • Low QG × RDS(on) FOM for high efficiency switching applications
  • Strong avalanche energy rating (Eas)
  • Avalanche rated and 100% tested
  • Ha-free and RoHS compliant LFPAK56 package
  • Wave solderable LFPAK56 package

 

Key technical features & portfolio

  • New 100V portfolio
  • Packages : LFPAK56 (SOT669) and LFPAK56E (SOT1023)
Portfolio Voltage RDS(on) [max]
@ VGS = 10 V
(mΩ)		 Package
PSMN6R9-100YSF 100V 7 mΩ LFPAK56
PSMN8R7-100YSF 100V 9 mΩ LFPAK56
PSMN011-100YSF 100V 10.9 mΩ LFPAK56

 

Functions & applications

  • Synchronous rectifier in AC/DC & DC/DC
  • Primary side switch 48V DC/DC
  • BLDC motor control
  • USB PD adapters & chargers
  • Full bridge and half bridge applications
  • Flyback and resonant topologies

 

Available packages

LFPAK56 (SOD669) LFPAK56E (SOT1023)
Nexperia LFPAK56 package - SOD669 Nexperia LFPAK56E package - SOT1023
5.0 x 6.0 x 1.0 5.0 x 6.0 x 1.0

 

 

Links & Documents

 

Related Videos

NextPowerS3

NextPower 80V/100V

 

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